Datasheet

ELECTRICAL CHARACTERISTICS
TPS61086
www.ti.com ................................................................................................................................................................................................ SLVSA05 – AUGUST 2009
V
IN
= 3.3 V, EN = IN, V
S
= 12 V, T
A
= – 40 ° C to 85 ° C, typical values are at T
A
= 25 ° C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
V
IN
Input voltage range 2.3 6.0 V
I
Q
Operating quiescent current into IN Device not switching, V
FB
= 1.3 V 75 100 µ A
I
SDVIN
Shutdown current into IN EN = GND 1 µ A
V
UVLO
Under-voltage lockout threshold V
IN
falling 2.2 V
V
IN
rising 2.3 V
T
SD
Thermal shutdown Temperature rising 150 ° C
T
SDHYS
Thermal shutdown hysteresis 14 ° C
LOGIC SIGNALS EN, FREQ
V
IH
High level input voltage V
IN
= 2.3 V to 6.0 V 2 V
V
IL
Low level input voltage V
IN
= 2.3 V to 6.0 V 0.5 V
I
INLEAK
Input leakage current EN = GND 0.1 µ A
BOOST CONVERTER
V
S
Boost output voltage V
IN
+ 18.5 V
0.5
V
FB
Feedback regulation voltage 1.230 1.238 1.246 V
gm Transconductance error amplifier 107 µ A/V
I
FB
Feedback input bias current V
FB
= 1.238 V 0.1 µ A
r
DS(on)
N-channel MOSFET on-resistance V
IN
= V
GS
= 5 V, I
SW
= current limit 0.13 0.20 Ω
V
IN
= V
GS
= 3.3 V, I
SW
= current limit 0.16 0.23
I
SWLEAK
SW leakage current EN = GND, V
SW
= 6.0V 10 µ A
I
LIM
N-Channel MOSFET current limit 2.0 2.6 3.2 A
I
SS
Soft-start current V
SS
= 1.238 V 7 10 13 µ A
f
S
Oscillator frequency 0.9 1.2 1.5 MHz
Line regulation V
IN
= 2.3 V to 6.0 V, I
OUT
= 10 mA 0.0002 %/V
Load regulation V
IN
= 3.3 V, I
OUT
= 1 mA to 400 mA 0.11 %/A
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