Datasheet

   
     
SGLS246A − JUNE 2004 − REVISED JUNE 2008
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range
from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage
because very small parametric changes could cause the device not to meet its published specifications. These devices have limited
built-in ESD protection.
typical application circuit
TPS60400
C
FLY−
C
FLY+
35
OUTIN
GND
1
2
4
C
I
1 µF
C
O
1 µF
Output
−1.6 V to −5 V,
Max 60 mA
Input
1.6 V to 5.5 V
C
(fly)
1 µF
−5
−4
−3
−2
−1
0
012345
I
O
= 60 mA
I
O
= 30 mA
I
O
= 1 mA
T
A
= 25°C
V
I
− Input Voltage − V
− Output Voltage − V
TPS60400
OUTPUT VOLTAGE
vs
INPUT VOLTAGE
V
O
TPS60400 functional block diagram
Start
FF
R
S
Q
V
I
− VCFLY+ < 0.5 V
V
I
MEAS
V
I
< 1 V
V
I
V
O
> V
be
V
O
MEAS
V
O
OSC
OSC
CHG
50 kHz
V
O
> −1 V
V
I
/ V
O
MEAS
V
I
V
O
VCO_CONT
V
O
< −V
I
− V
be
Phase
Generator
DC_ Startup
C
(fly)
+
Q3
Q2
Q1
Q4
V
I
V
O
GND
Q5
Q
Q
B
DC_ Startup