Datasheet

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SLVS289A − MARCH 2000 − REVISED OCTOBER 2000
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics T
J
= 0° to 125°C, V
CC
= 2.8 V to 5.5 V (unless otherwise noted) (continued)
output drivers (see Note 5)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Duty cycle < 2%, t
pw
< 100 us,
V
BOOT
– V
BOOTLO
= 4.5 V,
V
HIGHDR
= 4 V (sink), See Note 2 and Figure 15
0.7 2
Peak output current
Duty cycle < 2%, t
pw
< 100 us,
V
BOOT
– V
BOOTLO
= 4.5 V,
V
HIGHDR
= 0.5 V (source), See Note 2 and Figure 15
1.2 2
A
Peak output current
Duty cycle < 2%, t
pw
< 100 µs,
V
DRV
= 4.5 V, V
LOWDR
= 4 V (sink),
See Note 2 and Figure 15
1.3 2
A
Duty cycle < 2%, t
pw
< 100 us,
V
DRV
= 4.5 V, V
LOWDR
= 0.5 V (source),
See Note 2 and Figure 15
1.4 2
V
BOOT
– V
BOOTLO
= 4.5 V, V
HIGHDR
= 0.5 V,
See Note 2
5
Output resistance
V
BOOT
– V
BOOTLO
= 4.5 V, V
HIGHDR
= 4 V,
See Note 2
45
Ω
V
DRV
= 4.5 V, V
LOWDR
= 0.5 V, See Note 2 9
V
DRV
= 4.5 V, V
LOWDR
= 4 V, See Note 2 45
HIGHDR rise/fall time
C
L
= 3.3 nF, V
BOOT
= 4.5 V,
V
BOOTLO
=grounded, See Note 2
60 ns
LOWDR rise/fall time C
L
= 3.3 nF, V
DRV
= 4.5 V, See Note 2 40 ns
INHIBIT grounded, V
IN
< UVLO, V
BOOT
=6 V,
BOOTLO grounded
10 µA
High-side driver quiescent current
INHIBIT connected to +5 V, V
IN
> UVLO
f
(swx)
= 200 kHz, V
BOOT
= 5.5 V,
BOOTLO = 0, C
HIGHDR
= 50 pF,
See Note 2
2 mA
NOTES: 2. Ensured by design, not production tested.
5. The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors. The output resistance is the R
ds(on)
of the MOSFET transistor when
the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
LDO N-channel output driver
PARAMETER CONDITIONS MIN TYP MAX UNITS
Peak output current
V
LDODRV
= 7.5 V, V
N−DRV
= 3 V (source),
V
IOSENSE
= 0.9 × V
LDOREF
, See Note 2
100 µA
Peak output current
V
LDODRV
= 7.5 V, V
N−DRV
=0 V (sink),
V
IOSENSE
= 1.1 × V
LDOREF
, See Note 2
1.5 mA
Open loop voltage gain
(V
NGATE−LDO
/ V
SENSE−LDO
)
7.5 V ≥ V
NGATE−LDO
≥ 0.5 V, V
IN
= 5.5 V,
See Note 2
3000
(70)
V/V
(dB)
Power supply ripple rejection
f = 1 kHz, C
O
=10 µF,
5.5 V ≥ V
IN
≥ 2.55 V, T
J
=125 °C,
See Note 2
60 dB
NOTE 2. Ensured by design, not production tested.