Datasheet

TPS55383 , , TPS55386
www.ti.com ......................................................................................................................................................................................... SLUS818 – SEPTEMBER 2008
ELECTRICAL CHARACTERISTICS (continued)
– 40 ° C ≤ T
J
≤ +125 ° C, V
PVDD1
= V
PVDD2
= 12 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OVERCURRENT PROTECTION
I
CL1
Current limit Channel 1 3.6 4.5 5.6
V
ILIM2
= V
BP
3.6 4.5 5.6
A
I
CL2
Current limit Channel 2 V
ILIM2
= (floating) 2.4 3.0 3.6
V
ILIM2
= GND 1.15 1.50 1.75
V
UV1
Low-level output threshold to declare a fault Measured at feedback pin. 670 730 mV
V
UV2
T
HICCUP
(3)
Hiccup timeout 10 ms
t
ON1(oc)
(3)
Minimum overcurrent pulse width 90 150 ns
t
ON2(oc)
(3)
BOOTSTRAP
R
BOOT1
, From BP to BOOT1 or BP to BOOT2,
Bootstrap switch resistance 18 Ω
R
BOOT2
I
EXT
= 50 mA
OUTPUT STAGE (Channel 1 and Channel 2)
T
J
= +25 ° C, V
PVDD2
= 8 V 85
R
DS(on)
(3)
MOSFET on resistance plus bond wire resistance m Ω
– 40 ° C < T
J
< +125 ° C, V
PVDD2
= 8 V 85 165
t
ON(min)
(3)
Minimum controllable pulse width I
SWx
peak current > 1 A
(4)
100 200 ns
D
MIN
Minimum Duty Cycle V
FB
= 0.9 V 0 %
TPS55383 f
SW
= 300 kHz 90 95 %
D
MAX
Maximum Duty Cycle
TPS55386 f
SW
= 600 kHz 85 90 %
I
SW
Switching node leakage current (sourcing) Outputs OFF 2 12 µ A
THERMAL SHUTDOWN
T
SD
(3)
Shutdown temperature 148
° C
T
SD(hys)
(3)
Hysteresis 20
(3) Ensured by design. Not production tested.
(4) See Figure 14 for I
SWx
peak current < 1 A.
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