Datasheet

TPS55340
www.ti.com SLVSBD4B –MAY 2012–REVISED OCTOBER 2012
ELECTRICAL CHARACTERISTICS (continued)
Vin=5V, T
J
= –40°C to +150°C, unless otherwise noted. Typical values are at T
A
= 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ENABLE AND REFERENCE CONTROL
V
EN
EN threshold voltage EN rising input 0.9 1.08 1.30 V
V
ENh
EN threshold hysteresis 0.1 0.16 0.22 V
R
EN
EN pull down resistor 400 950 1600 kΩ
T
off
Shutdown delay, SS discharge EN high to low 1.0 ms
V
SYNh
SYN logic high voltage 1.2
V
SYNl
SYN logic low voltage 0.4 V
VOLTAGE AND CURRENT CONTROL
1.204 1.229 1.254
V
REF
Voltage feedback regulation voltage V
T
A
= 25°C 1.220 1.229 1.238
I
FB
Voltage feedback input bias current T
A
= 25°C 1.6 20 nA
I
sink
Comp pin sink current V
FB
= V
REF
+200 mV, V
COMP
= 1 V 42 µA
I
source
Comp pin source current V
FB
= V
REF
–200 mV, V
COMP
= 1 V 42 µA
High Clamp, V
FB
= 1 V 3.1
V
CCLP
Comp pin Clamp Voltage V
Low Clamp, V
FB
= 1.5 V 0.75
V
CTH
Comp pin threshold Duty cycle = 0% 1.04 V
G
ea
Error amplifier transconductance 240 360 440 µmho
R
ea
Error amplifier output resistance 10 MΩ
f
ea
Error amplifier crossover frequency 500 kHz
FREQUENCY
R
FREQ
= 480 kΩ 75 94 130
f
SW
Frequency R
FREQ
= 80 kΩ 460 577 740 kHz
R
FREQ
= 40 kΩ 920 1140 1480
D
max
Maximum duty cycle V
FB
= 1.0 V, R
FREQ
= 80 kΩ 89% 96%
V
FREQ
FREQ pin voltage 1.25 V
T
min_on
Minimum on pulse width R
FREQ
= 80 kΩ 77 ns
POWER SWITCH
V
IN
= 5 V 60 110
R
DS(ON)
N-channel MOSFET on-resistance mΩ
V
IN
= 3 V 70 120
I
LN_NFET
N-channel leakage current V
DS
= 25 V, T
A
= 25°C 2.1 µA
OCP and SS
I
LIM
N-Channel MOSFET current limit D = D
max
5.25 6.6 7.75 A
I
SS
Soft-start bias current Vss = 0 V 6 µA
THERMAL SHUTDOWN
T
shutdown
Thermal shutdown threshold 165 °C
T
hysteresis
Thermal shutdown threshold hysteresis 15 °C
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