Datasheet
TPS54622
www.ti.com
SLVSA70B –MARCH 2011–REVISED JANUARY 2014
THERMAL INFORMATION
TPS54622
THERMAL METRIC
(1)(2)
QFN UNITS
14 PINS
θ
JA
Junction-to-ambient thermal resistance 47.2
θ
JA
Junction-to-ambient thermal resistance
(3)
32
θ
JCtop
Junction-to-case (top) thermal resistance 64.8
θ
JB
Junction-to-board thermal resistance 14.4 °C/W
ψ
JT
Junction-to-top characterization parameter 0.5
ψ
JB
Junction-to-board characterization parameter 14.7
θ
JCbot
Junction-to-case (bottom) thermal resistance 3.2
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) Power rating at a specific ambient temperature T
A
should be determined with a junction temperature of 150°C. This is the point where
distortion starts to substantially increase. Thermal management of the PCB should strive to keep the junction temperature at or below
150°C for best performance and long-term reliability. See power dissipation estimate in application section of this data sheet for more
information.
(3) Test board conditions:
(a) 2.5 inches × 2.5 inches, 4 layers, thickness: 0.062 inch
(b) 2 oz. copper traces located on the top of the PCB
(c) 2 oz. copper ground planes on the 2 internal layers and bottom layer
(d) 4 0.010 inch thermal vias located under the device package
ELECTRICAL CHARACTERISTICS
T
J
= –40°C to 150°C, VIN = 4.5V to 17V, PVIN = 1.6V to 17V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE (VIN AND PVIN PINS)
PVIN operating input voltage 1.6 17 V
VIN operating input voltage 4.5 17 V
VIN internal UVLO threshold VIN rising 4.0 4.5 V
VIN internal UVLO hysteresis 150 mV
VIN shutdown supply Current EN = 0 V 2 5 μA
VIN operating – non switching supply current VSENSE = 810 mV 600 800 μA
ENABLE AND UVLO (EN PIN)
Enable threshold Rising 1.21 1.26 V
Enable threshold Falling 1.10 1.17
Input current EN = 1.1 V 1.15 μA
Hysteresis current EN = 1.3 V 3.3 μA
VOLTAGE REFERENCE
Voltage reference 0 A ≤ I
OUT
≤ 6 A 0.594 0.6 0.606 V
MOSFET
High-side switch resistance BOOT-PH = 3 V 32 60 mΩ
High-side switch resistance
(1)
BOOT-PH = 6 V 26 40 mΩ
Low-side Switch Resistance
(1)
VIN = 12 V 19 30 mΩ
ERROR AMPLIFIER
Error amplifier Transconductance (gm) –2 μA < I
COMP
< 2 μA, V
(COMP)
= 1 V 1300 μMhos
Error amplifier dc gain VSENSE = 0.8 V 1000 3100 V/V
V
(COMP)
= 1 V, 100 mV input
Error amplifier source/sink ±110 μA
overdrive
Start switching threshold 0.25 V
COMP to Iswitch gm 16 A/V
CURRENT LIMIT
(1) Measured at pins
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