Datasheet

TPS54611, TPS54612
TPS54613, TPS54614
TPS54615, TPS54616
SLVS400C − AUGUST 2001 − REVISED APRIL 2005
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5
ELECTRICAL CHARACTERISTICS (CONTINUED)
T
J
= –40°C to 125°C, V
I
= 3 V to 6 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ERROR AMPLIFIER
Error amplifier open loop voltage gain
(1)
26 dB
Error amplifier unity gain bandwidth
(1)
3 5 MHz
Error amplifier common mode input voltage range Powered by internal LDO
(1)
0 VBIAS V
PWM COMPARATOR
PWM comparator propagation delay time, PWM
comparator input to PH pin (excluding deadtime)
10-mV overdrive
(1)
70 85 ns
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA 0.82 1.20 1.40 V
Enable hysteresis voltage, SS/ENA
(1)
0.03 V
Falling edge deglitch, SS/ENA
(1)
2.5 µs
TPS54611 2.6 3.3 4.1
TPS54612 3.5 4.5 5.4
Internal slow start time
(1)
TPS54613 4.4 5.6 6.7
ms
Internal slow-start time
(1)
TPS54614 2.6 3.3 4.1
ms
TPS54615 3.6 4.7 5.6
TPS54616 4.7 6.1 7.6
Charge current, SS/ENA SS/ENA = 0V 3 5 8 µA
Discharge current, SS/ENA SS/ENA = 0.2 V, V
I
= 2.7 V 1.5 2.3 4.0 mA
POWER GOOD
Power good threshold voltage VSENSE falling 90 %V
O
Power good hysteresis voltage See Note 1 3 %V
O
Power good falling edge deglitch See Note 1 35 µs
Output saturation voltage, PWRGD I
(sink)
= 2.5 mA 0.18 0.3 V
Leakage current, PWRGD V
I
= 5.5 V 1 µA
CURRENT LIMIT
Current limit
V
I
= 3 V
(1)
7.2 10
A
Current limit
V
I
= 6 V
(1)
10 12
A
Current limit leading edge blanking time (see Note 1) 100 ns
Current limit total response time (see Note 1) 200 ns
THERMAL SHUTDOWN
Thermal shutdown trip point
(1)
135 150 165
_C
Thermal shutdown hysteresis
(1)
10
_C
OUTPUT POWER MOSFETS
r
Power MOSFET switches
I
O
= 3 A, V
I
= 6 V
(2)
26 47
mΩ
r
DS(on)
Power MOSFET switches
I
O
= 3 A, V
I
= 3 V
(2)
36 65
mΩ
(1)
Specified by design
(2)
Matched MOSFETs, low side r
DS(on)
production tested, high side r
DS(on)
specified by design.