Datasheet

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TPS54550
SLVS623A–MARCH2006–REVISEDAPRIL2006
ELECTRICALCHARACTERISTICS(continued)
T
J
=–40°Cto+125°C,VIN=4.5Vto20V(unlessotherwisenoted)
PARAMETERTESTCONDITIONS MINTYPMAXUNIT
SlowStart/ENABLE(SSENAPIN)
Disablelowlevelinputvoltage0.5V
f
s
=250kHz,RT=ground
(1)
4.6
Internalslow-starttime(10%to90%)ms
f
s
=500kHz,RT=Hi-Z
(1)
2.3
Pull-upcurrentsource1.8510μA
Pull-downMOSFETII(SSENA)=1mA0.1V
POWERGOOD(PWRGDPIN)
PowergoodthresholdRisingvoltage97%
f
s
=250kHz4
Risingedgedelay
(1)
ms
f
s
=500kHz2
OutputsaturationvoltageI
sink
=1mA,VIN>4.5V0.05V
PWRGDOutputsaturationvoltageI
sink
=100μA,VIN=0V0.76V
OpendrainleakagecurrentVoltageonPWRGD=6V3μA
CURRENTLIMIT
CurrentlimitVIN=12V7.58.59.5A
CurrentlimitHiccupTime
(1)
f
s
=500kHz4.5ms
THERMALSHUTDOWN
Thermalshutdowntrippoint165°C
Thermalshutdownhysteresis
(1)
7°C
LOWSIDEMOSFETDRIVER(LSGPIN)
VIN=4.5V,Capacitiveload=1000pF15
Turnonrisetime,(10%/90%)
(1)
ns
VIN=8V,Capacitiveload=1000pF12
Dead-time
(1)
VIN=12V60ns
VIN=4.5Vsink/source7.5
DriverONresistanceΩ
VIN=12Vsink/source5
OUTPUTPOWERMOSFETS(PHPIN)
PhasenodevoltagewhendisabledDCconditionsandnoload,SSENA=0V0.5V
VIN=4.5V,Idc=100mA1.131.42
Voltagedrop,low-sideFETanddiodeV
VIN=12V,Idc=100mA1.081.38
VIN=4.5V,BOOT-PH=4.5V,I
O
=0.5A60
r
DS(ON)
HighsidepowerMOSFETswitch
(2)
mΩ
VIN=12V,BOOT-PH=8V,I
O
=0.5A40
(1)Specifiedbydesign,notproductiontested.
(2)ResistancefromVINtoPHpins.
5
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