Datasheet

Table Of Contents
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TPS54383 , , TPS54386
SLUS774B AUGUST 2007 REVISED OCTOBER 2007
ELECTRICAL CHARACTERISTICS (continued)
40 ° C T
J
+125 ° C, V
PVDD1
= V
PVDD2
= 12 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BOOTSTRAP
R
BOOT1
From BP to BOOT1 or BP to BOOT2,
Bootstrap switch resistance 18
I
EXT
= 50 mA
R
BOOT2
OUTPUT STAGE (Channel 1 and Channel 2)
T
J
= +25 ° C, V
PVDD2
= 8 V 85
R
DS(on)
(3)
MOSFET on resistance plus bond wire resistance m
40 ° C < T
J
< +125 ° C, V
PVDD2
= 8 V 85 165
t
ON(min)
(3)
Minimum controllable pulse width I
SWx
peak current > 1 A
(4)
100 200 ns
D
MIN
Minimum Duty Cycle V
FB
= 0.9 V 0 %
TPS54383 f
SW
= 300 kHz 90 95 %
D
MAX
Maximum Duty Cycle
TPS54386 f
SW
= 600 kHz 85 90 %
I
SW
Switching node leakage current (sourcing) Outputs OFF 2 12 µ A
THERMAL SHUTDOWN
T
SD
(3)
Shutdown temperature 148
° C
T
SD(hys)
(3)
Hysteresis 20
(3) Ensured by design. Not production tested.
(4) See Figure 14 for I
SWx
peak current <1 A.
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