Datasheet

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 
 
SLVS519A − MAY 2004 − REVISED OCTOBER 2004
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6
ELECTRICAL CHARACTERISTICS (CONTINUED)
T
J
= –40°C to 125°C, VIN = 4.5 V to 20 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CURRENT LIMIT
Current limit VIN = 12 V 3.3 4.5 6.5 A
Current limit hiccup time
(1)
f
s
= 500 kHz 4.5 ms
THERMAL SHUTDOWN
Thermal shutdown trip point
(1)
165 _C
Thermal shutdown hysteresis
(1)
7 _C
LOW SIDE MOSFET DRIVER (LSG PIN)
Turn on rise time, (10%/90%)
(1)
VIN = 4.5 V, Capacitive load = 1000 pF
15 ns
Deadtime
(1)
VIN = 12 V
60 ns
Driver ON resistance
VIN = 4.5 V sink/source
7.5
Ω
Driver ON resistance
VIN = 12 V sink/source
5
Ω
OUTPUT POWER MOSFETS (PH PIN)
Phase node voltage when disabled DC conditions and no load, ENA = 0 V
0.5 V
Voltage drop, low side FET and diode
VIN = 4.5 V, Idc = 100 mA
1.13 1.42
V
Voltage drop, low side FET and diode
VIN = 12 V, Idc = 100 mA
1.08 1.38
V
r
DS(ON)
High side power MOSFET switch
(2)
VIN = 4.5 V, BOOT−PH = 4.5 V, I
O
= 0.5 A
150 300
mΩ
r
DS(ON)
High side power MOSFET switch
(2)
VIN = 12 V, BOOT−PH = 8 V, I
O
= 0.5 A
100 200
m
Ω
(1)
Ensured by design, not production tested.
(2)
Resistance from VIN to PH pins.