Datasheet

60
65
70
75
80
85
90
95
100
0 0.5 1 1.5 2 2.5 3 3.5
I -OutputCurrent- A
O
Efficiency-%
V =2.5V
O
V =5V
I
V =12V
I
V =15V
I
V =2.5V
O
50
55
60
65
70
75
80
85
90
95
100
0 0.025 0.05 0.075 0.1 0.125 0.15 0.175 0.2 0.225 0.25
I -OutputCurrent- A
O
V =5V
I
Efficiency-%
V =12V
I
V =15V
I
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 0.5 1 1.5 2 2.5 3 3.5
I -OutputCurrent- A
O
V =5V
I
V =12V
I
V =15V
I
OutputVoltageRegulation-%
-0.025
-0.02
-0.015
-0.01
-0.005
0
0.005
0.01
0.015
0.02
0.025
5 6 7 8 9 10 11 12 13 14 15
I =1 A
O
V -InputVoltage-V
I
OutputRegulation-%
TPS54332
SLVS875B –JANUARY 2009–REVISED FEBRUARY 2012 www.ti.com
Estimated Circuit Area
The estimated printed circuit board area for the components used in the design of Figure 12 is 0.58 in
2
. This area
does not include test points or connectors.
ELECTROMAGNETIC INTERFERENCE (EMI) CONSIDERATIONS
As EMI becomes a rising concern in more and more applications, the internal design of the TPS54332 takes
measures to reduce the EMI. The high-side MOSFET gate drive is designed to reduce the PH pin voltage
ringing. The internal IC rails are isolated to decrease the noise sensitivity. A package bond wire scheme is used
to lower the parasitics effects.
To achieve the best EMI performance, external component selection and board layout are equally important.
Follow the Step by Step Design Procedure above to prevent potential EMI issues.
APPLICATION CURVES
Figure 14. TPS54332 Efficiency Figure 15. TPS54332 Low Current Efficiency
Figure 16. TPS54332 Load Regulation Figure 17. TPS54332 Line Regulation
18 Submit Documentation Feedback Copyright © 2009–2012, Texas Instruments Incorporated
Product Folder Link(s): TPS54332