Datasheet

TPS54317
SLVS619B –NOVEMBER 2005–REVISED SEPTEMBER 2009 ..................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
T
J
= –40°C to 125°C, V
I
= 3 V to 6 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ERROR AMPLIFIER
Error amplifier open loop voltage gain 1 kΩ COMP to AGND
(4)
90 110 dB
Error amplifier unity gain bandwidth Parallel 10 kΩ, 160 pF COMP to AGND
(4)
3 5 MHz
Error amplifier common-mode input
Powered by internal LDO
(4)
0 VBIAS V
voltage range
I
IB
Input bias current, VSENSE VSENSE = V
ref
60 250 nA
Output voltage slew rate (symmetric),
V
O
1 1.4 V/µs
COMP
PWM COMPARATOR
PWM comparator propagation delay
time, PWM comparator input to PH pin 10 mV overdrive
(4)
70 85 ns
(excluding dead time)
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA 0.82 1.2 1.4 V
Voltage to regulate using the internal 1.95 2.2 V
V
ref
, SS/ENA
Enable hysteresis voltage, SS/ENA
(4)
0.03 V
Falling edge deglitch, SS/ENA
(4)
2.5 µs
Internal slow-start time 2.6 3.35 4.1 ms
Charge current, SS/ENA SS/ENA = 0 V 3 5 8 µA
Discharge current, SS/ENA SS/ENA = 0.2 V, V
I
= 2.7 V 1.5 2.3 4 mA
POWER GOOD
Power good threshold voltage VSENSE falling 90 %V
ref
Power good hysteresis voltage
(4)
3 %V
ref
Power good falling edge deglitch
(4)
35 µs
Output saturation voltage, PWRGD I
(sink)
= 2.5 mA 0.18 0.3 V
Leakage current, PWRGD V
I
= 5.5 V 1 µA
CURRENT LIMIT
V
I
= 3 V, output shorted
(4)
4 6.5
Current limit trip point A
V
I
= 6 V, output shorted
(4)
4.5 7.5
Current limit leading edge blanking
100 ns
time
(4)
Current limit total response time
(4)
200 ns
THERMAL SHUTDOWN
Thermal shutdown trip point
(4)
135 150 165 °C
Thermal shutdown hysteresis
(4)
10 °C
OUTPUT POWER MOSFETS
V
I
= 6 V 59 88 mΩ
r
DS(on)
Power MOSFET switches
V
I
= 3 V 85 136
(4) Specified by design
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