Datasheet

TPS54310-Q1
SGLS280D − JANUARY 2005 − REVISED JUNE 2009
www.ti.com
5
ELECTRICAL CHARACTERISTICS (continued)
T
J
= −40°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ERROR AMPLIFIER
Error amplifier open loop voltage gain 1-kΩ COMP to AGND
(1)
90 110 dB
Error amplifier unity gain bandwidth Parallel 10 kΩ, 160 pF COMP to AGND
(1)
3 5 MHz
Error amplifier common-mode input voltage
range
Powered by internal LDO
(1)
0 VBIAS V
I
IB
Input bias current, VSENSE
(1)
VSENSE = V
ref
60 250 nA
V
O
Output voltage slew rate (symmetric),
COMP
(1)
1 1.4 V/µs
PWM COMPARATOR
PWM comparator propagation delay time,
PWM comparator input to PH pin (excluding
dead time)
10-mV overdrive
(1)
70 85 ns
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA 0.82 1.2 1.4 V
Enable hysteresis voltage, SS/ENA
(1)
0.03 V
Falling edge deglitch, SS/ENA
(1)
2.5 µs
Internal slow-start time
(1)
2.6 3.35 4.1 ms
Charge current, SS/ENA SS/ENA = 0 V 2.5 5 8 µA
Discharge current, SS/ENA SS/ENA = 0.2 V, V
I
= 2.7 V 1.2 2.3 4 mA
POWER GOOD
Power good threshold voltage VSENSE falling 90 %V
ref
Power good hysteresis voltage
(1)
3 %V
ref
Power good falling edge deglitch
(1)
35 µs
Output saturation voltage, PWRGD I
(sink)
= 2.5 mA 0.18 0.3 V
Leakage current, PWRGD V
I
= 5.5 V 1 µA
CURRENT LIMIT
Current limit trip point
V
I
= 3 V, output shorted
(1)
4 6.5
A
Current limit trip point
V
I
= 6 V, output shorted
(1)
4.5 7.5
A
Current limit leading edge blanking time 100 ns
Current limit total response time 200 ns
THERMAL SHUTDOWN
Thermal shutdown trip point
(1)
135 150 165 °C
Thermal shutdown hysteresis
(1)
10 °C
OUTPUT POWER MOSFETS
r
Power MOSFET switches
I
O
= 3 A, V
I
= 6 V
(2)
59 88
mΩ
r
DS(on)
Power MOSFET switches
I
O
= 3 A, V
I
= 3 V
(2)
85 136
mΩ
(1)
Specified by design
(2)
Matched MOSFETs, low side r
DS(on)
production tested, high side r
DS(on)
specified by design