Datasheet

www.ti.com
TPS54310
SLVS412D – DECEMBER 2001 – REVISED FEBRUARY 2007
ELECTRICAL CHARACTERISTICS (continued)
T
J
= –40 ° C to 125 ° C, VIN = 3 V to 6 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ERROR AMPLIFIER
Error amplifier open loop voltage gain 1 k Ω COMP to AGND
(4)
90 110 dB
Error amplifier unity gain bandwidth Parallel 10 k Ω , 160 pF COMP to AGND
(4)
3 5 MHz
Error amplifier common-mode input voltage range Powered by internal LDO
(4)
0 VBIAS V
I
IB
Input bias current, VSENSE VSENSE = V
ref
60 250 nA
V
O
Output voltage slew rate (symmetric), COMP 1 1.4 V/µs
PWM COMPARATOR
PWM comparator propagation delay time, PWM
10 mV overdrive
(4)
70 85 ns
comparator input to PH pin (excluding dead time)
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA 0.82 1.20 1.40 V
Enable hysteresis voltage, SS/ENA
(4)
0.03 V
Falling edge deglitch, SS/ENA
(4)
2.5 µs
Internal slow-start time 2.6 3.35 4.1 ms
Charge current, SS/ENA SS/ENA = 0 V 3 5 8 µA
Discharge current, SS/ENA SS/ENA = 0.2 V, V
I
= 2.7 V 1.5 2.3 4 mA
POWER GOOD
Power good threshold voltage VSENSE falling 90 %V
ref
3
%V
ref
Power good hysteresis voltage
(4)
35 µs
Power good falling edge deglitch
(4)
Output saturation voltage, PWRGD I
(sink)
= 2.5 mA 0.18 0.30 V
Leakage current, PWRGD V
I
= 5.5 V 1 µA
CURRENT LIMIT
4 6.5
V
I
= 3 V, output shorted
(4)
Current limit trip point A
4.5 7.5
V
I
= 6 V, output shorted
(4)
100 ns
Current limit leading edge blanking time
(4)
200 ns
Current limit total response time
(4)
THERMAL SHUTDOWN
135 150 165 ° C
Thermal shutdown trip point
(4)
10 ° C
Thermal shutdown hysteresis
(4)
OUTPUT POWER MOSFETS
I
O
= 3 A, VI = 6 V
(5)
59 88
r
DS(on)
Power MOSFET switches m Ω
I
O
= 3 A, VI = 3 V
(5)
85 136
(4) Specified by design
(5) Matched MOSFETs, low side r
DS(on)
production tested, high side r
DS(on)
specified by design.
4
Submit Documentation Feedback