Datasheet
TPS54260
www.ti.com
SLVSA86A –MARCH 2010–REVISED DECEMBER 2010
THERMAL INFORMATION
TPS54260
THERMAL METRIC
(1)(2)
UNITS
DGQ (10 PINS) DRC (10 PINS)
q
JA
Junction-to-ambient thermal resistance (standard board) 62.5 40
q
JA
Junction-to-ambient thermal resistance (custom board)
(3)
57 56.5
y
JT
Junction-to-top characterization parameter 1.7 0.6
y
JB
Junction-to-board characterization parameter 20.1 7.5 °C/W
q
JCtop
Junction-to-case(top) thermal resistance 83 65
q
JCbot
Junction-to-case(bottom) thermal resistance 21 7.8
q
JB
Junction-to-board thermal resistance 28 8
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where
distortion starts to substantially increase. See power dissipation estimate in application section of this data sheet for more information.
(3) Test boards conditions:
(a) 3 inches x 3 inches, 2 layers, thickness: 0.062 inch
(b) 2 oz. copper traces located on the top of the PCB
(c) 2 oz. copper ground plane, bottom layer
(d) 6 thermal vias (13mil) located under the device package
ELECTRICAL CHARACTERISTICS
T
J
= –40°C to 150°C, VIN = 3.5 to 60V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE (VIN PIN)
Operating input voltage 3.5 60 V
Internal undervoltage lockout threshold No voltage hysteresis, rising and falling 2.5 V
Shutdown supply current EN = 0 V, 25°C, 3.5 V ≤ VIN ≤ 60 V 1.3 4
mA
Operating: nonswitching supply current VSENSE = 0.83 V, VIN = 12 V, 25°C 138 200
ENABLE AND UVLO (EN PIN)
Enable threshold voltage No voltage hysteresis, rising and falling, 25°C 1.15 1.25 1.36 V
Enable threshold +50 mV –3.8
Input current mA
Enable threshold –50 mV –0.9
Hysteresis current –2.9 mA
VOLTAGE REFERENCE
T
J
= 25°C 0.792 0.8 0.808
Voltage reference V
0.784 0.8 0.816
HIGH-SIDE MOSFET
VIN = 3.5 V, BOOT-PH = 3 V 300
On-resistance mΩ
VIN = 12 V, BOOT-PH = 6 V 200 410
ERROR AMPLIFIER
Input current 50 nA
Error amplifier transconductance (g
M
) –2 mA < I
COMP
< 2 mA, V
COMP
= 1 V 310 mMhos
–2 mA < I
COMP
< 2 mA, V
COMP
= 1 V,
Error amplifier transconductance (g
M
) during
70 mMhos
slow start
V
VSENSE
= 0.4 V
Error amplifier dc gain V
VSENSE
= 0.8 V 10,000 V/V
Error amplifier bandwidth 2700 kHz
Error amplifier source/sink V
(COMP)
= 1 V, 100 mV overdrive ±27 mA
COMP to switch current transconductance 10.5 A/V
CURRENT LIMIT
Current limit threshold VIN = 12 V, T
J
= 25°C 3.5 6.1 A
THERMAL SHUTDOWN
Thermal shutdown 182 °C
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