Datasheet
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Dissipation Ratings
(1) (2)
Recommended Operating Conditions
Electrical Characteristics
TPS5420-EP
SLVS717 – DECEMBER 2006
THERMAL IMPEDANCE
PACKAGE
JUNCTION-TO-AMBIENT
8-pin D
(3)
75° C/W
(1) Maximum power dissipation may be limited by overcurrent protection.
(2) Power rating at a specific ambient temperature T
A
should be determined with a junction temperature of 125 ° C. This is the point where
distortion starts to substantially increase. Thermal management of the final PCB should strive to keep the junction temperature at or
below 125 ° C for best performance and long-term reliability. See Thermal Calculations in applications section of this data sheet for more
information.
(3) Test board conditions:
a. 3 in × 3 in, two layers, thickness: 0.062 in
b. 2-oz copper traces located on the top and bottom of the PCB
MIN MAX UNIT
V
I
Input voltage range, VIN 5.5 35 V
T
J
Operating junction temperature –55 125 ° C
T
J
= –55 ° C to 125 ° C, VIN = 5.5 V to 35 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Supply Voltage (VIN Pin)
VSENSE = 2 V, Not switching, PH pin open 3 4.4 mA
I
Q
Quiescent current
Shutdown, ENA = 0 V 18 50 µ A
Undervoltage Lockout (UVLO)
Start threshold voltage, UVLO 5.3 5.5 V
Hysteresis voltage, UVLO 330 mV
Voltage Reference
T
J
= 25 ° C 1.202 1.221 1.239
Voltage reference accuracy V
I
O
= 0 A – 2 A 1.196 1.221 1.245
Oscillator
T
J
= 25 ° C 400 500 600 kHz
Internally set free-running frequency
T
J
= -55 ° C to 125 ° C 375 600 kHz
Minimum controllable on time 150 200 ns
Maximum duty cycle 87% 89%
Enable (ENA Pin)
Start threshold voltage, ENA 1.3 V
Stop threshold voltage, ENA 0.5 V
Hysteresis voltage, ENA 450 mV
Internal slow-start time (0 ~ 100%) 6.6 8 10.6 ms
Current Limit
Current limit 3 4 5.2 A
Current limit hiccup time 13 16 22 ms
Thermal Shutdown
Thermal shutdown trip point 135 162 ° C
Thermal shutdown hysteresis 14 ° C
Output MOSFET
VIN = 5.5 V 150
r
DS(on)
High-side power MOSFET switch m Ω
VIN = 10 V – 35 V 110 230
3
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