Datasheet
0
10
20
30
40
50
60
70
80
90
100
0 100 200 300 400 500 600 700 800 900 1000
Output Current (mA)
Efficiency (%)
V
IN
= 15 V
V
IN
= 12 V
V
IN
= 10 V
V
IN
= 8 V
V
OUT
= 3.3 V
G027
80
90
100
110
120
−40 −25 −10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Minimum Controllable On Time (ns)
I
DC−DCOUT
= 2 A
G025
3
4
5
6
−40 −25 −10 5 20 35 50 65 80 95 110 125
Temperature (°C)
Minimum Controllable Duty Ratio (%)
R
RT
= 100 kΩ
I
DC−DCOUT
= 2 A
G026
80
90
100
110
120
-50 -25
0 25 50 75 100 125 150
T - Junction Temperature - °C
J
PWRGD Threshold - % of V
ref
VSENSE Rising
(overvoltage)
V = 12 V
I
VSENSE Falling
(overvoltage)
VSENSE Rising
(undervoltage)
VSENSE Falling
(undervoltage)
5
5.5
6
6.5
7
−40 −25 −10 5 20 35 50 65 80 95 110 125
Temperature (°C)
I
LIM(HS)
− Current Limit Thresholdt (A)
G024
TPS54120
www.ti.com
SBVS180C –JANUARY 2012–REVISED JUNE 2012
TYPICAL CHARACTERISTICS (continued)
At V
(PVIN)
= V
(VIN)
= 12 V, V
(LDOIN)
= DC-DC_OUT = 4.1 V, V
(OUT)
= 3.3 V, I
(OUT)
= 10 mA, V
(EN)
= floating, C
OUT
= 100 μF, and
C
SS
= C
NR
= 0.01µF (see Figure 28), unless otherwise noted.
PWRGD PIN THRESHOLD HIGH-SIDE CURRENT LIMIT
vs TEMPERATURE vs TEMPERATURE
Figure 23. Figure 24.
MINIMUM CONTROLLABLE ON-TIME MINIMUM CONTROLLABLE DUTY RATIO
vs TEMPERATURE vs TEMPERATURE
Figure 25. Figure 26.
EFFICIENCY
vs LOAD CURRENT
Figure 27.
Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 11