Datasheet

TPS54110−Q1
SLVS837 − JULY 2008
www.ti.com
4
ELECTRICAL CHARACTERISTICS (continued)
T
J
= −40°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ERROR AMPLIFIER
Error-amplifier open loop voltage gain 1 kΩ COMP to AGND
(1)
90 110 dB
Error-amplifier unity gain bandwidth Parallel 10 kΩ, 160 pF COMP to AGND
(1)
3 5 MHz
Error-amplifier common-mode input voltage
range
Powered by internal LDO
(1)
0 VBIAS V
I
IB
Input bias current, VSENSE VSENSE = V
ref
60 250 nA
V
O
Output voltage slew rate (symmetric),
COMP
(1)
1.2 V/µs
PWM COMPARATOR
PWM comparator propagation delay time,
PWM comparator input to PH pin (excluding
dead time)
10 mV overdrive
(1)
70 85 ns
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA 0.82 1.20 1.40 V
Enable hysteresis voltage, SS/ENA
(1)
0.03 V
Falling-edge deglitch, SS/ENA
(1)
2.5 µs
Internal slow-start time 2.6 3.35 4.1 ms
Charge current, SS/ENA SS/ENA = 0 V 2.5 5 8 µA
Discharge current, SS/ENA SS/ENA = 0.2 V, V
I
= 2.7 V 1.2 2.3 4 mA
POWER GOOD
Power-good threshold voltage VSENSE falling 93 %V
ref
Power-good hysteresis voltage
(1)
3 %V
ref
Power-good falling-edge deglitch
(1)
35 µs
Output saturation voltage, PWRGD I
(sink)
= 2.5 mA 0.18 0.30 V
Leakage current, PWRGD V
I
= 5.5 V 1 µA
CURRENT LIMIT
Current limit trip point
V
I
= 3 V, output shorted
(1)
3.0
A
Current-limit trip point
V
I
= 6 V, output shorted
(1)
3.5
A
Current-limit leading edge blanking time 100 ns
Current-limit total response time 200 ns
THERMAL SHUTDOWN
Thermal-shutdown trip point
(1)
135 150 165 °C
Thermal-shutdown hysteresis
(1)
10 °C
OUTPUT POWER MOSFETS
r
Power MOSFET switches
(3)
I
O
= 1.5 A, V
I
= 6 V
(2)
240 480
mΩ
r
DS(on)
Power MOSFET switches
(3)
I
O
= 1.5 A, V
I
= 3 V
(2)
345 690
mΩ
(1)
Specified by design
(2)
Matched MOSFETs, low side r
DS(on)
production tested, high side r
DS(on)
specified by design
(3)
Includes package and bondwire resistance