Datasheet

TPS54110
SLVS500C – DECEMBER 2003–REVISED FEBRUARY 2011 www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
T
J
= –40°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ERROR AMPLIFIER
Error-amplifier open loop voltage
1 kΩ COMP to AGND
(4)
90 110 dB
gain
Error-amplifier unity gain
Parallel 10 kΩ, 160 pF COMP to AGND
(4)
3 5 MHz
bandwidth
Error-amplifier common-mode
Powered by internal LDO
(4)
0 VBIAS V
input voltage range
I
IB
Input bias current, VSENSE VSENSE = V
ref
60 250 nA
Output voltage slew rate
V
O
1.2 V/µs
(symmetric), COMP
(4)
PWM COMPARATOR
PWM comparator propagation
delay time, PWM comparator
10 mV overdrive
(4)
70 85 ns
input to PH pin (excluding dead
time)
SLOW-START/ENABLE
Enable threshold voltage,
0.82 1.20 1.40 V
SS/ENA
Enable hysteresis voltage,
0.03 V
SS/ENA
(4)
Falling-edge deglitch, SS/ENA
(4)
2.5 µs
Internal slow-start time 2.6 3.35 4.1 ms
Charge current, SS/ENA SS/ENA = 0 V 3 5 8 µA
Discharge current, SS/ENA SS/ENA = 1.3 V, V
I
= 1.5 V 1.5 2.3 4 mA
POWER GOOD
Power-good threshold voltage VSENSE falling 93 %V
ref
Power-good hysteresis voltage
(4)
3 %V
ref
Power-good falling-edge
35 µs
deglitch
(4)
Output saturation voltage,
I
(sink)
= 2.5 mA 0.18 0.30 V
PWRGD
Leakage current, PWRGD V
I
= 5.5 V 1 µA
CURRENT LIMIT
V
I
= 3 V, output shorted
(4)
3.0
Current limit trip point A
V
I
= 6 V, output shorted
(4)
3.5
Current-limit leading edge
100 ns
blanking time
Current-limit total response time 200 ns
THERMAL SHUTDOWN
Thermal-shutdown trip point
(4)
135 150 165 °C
Thermal-shutdown hysteresis
(4)
10 °C
OUTPUT POWER MOSFETS
I
O
= 1.5 A, V
I
= 6 V
(6)
240 480
r
DS(on)
Power MOSFET switches
(5)
mΩ
I
O
= 1.5 A, V
I
= 3 V
(6)
345 690
(4) Specified by design
(5) Includes package and bondwire resistance
(6) Matched MOSFETs, low side r
DS(on)
production tested, high side r
DS(on)
specified by design
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