Datasheet

TPS54060A
SLVSB57B –MARCH 2012–REVISED SEPTEMBER 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
(1)
T
J
PACKAGE PART NUMBER
(2)
MSOP-10 TPS54060ADGQ
–40°C to 150°C
VSON-10 TPS54060ADRC
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(2) The DGQ package is also available taped and reeled. Add an R suffix to the device type (i.e., TPS54060ADGQR).
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating temperature range (unless otherwise noted).
VALUE
UNIT
MIN MAX
VIN –0.3 65
EN –0.3 5
BOOT 73
VSENSE –0.3 3
Input voltage V
COMP –0.3 3
PWRGD –0.3 6
SS/TR –0.3 3
RT/CLK –0.3 3.6
BOOT-PH 8
Output voltage PH –0.6 65 V
PH, 10-ns Transient –2 65
Voltage Difference PAD to GND ±200 mV
EN 100 μA
BOOT 100 mA
Source current VSENSE 10 μA
PH Current Limit A
RT/CLK 100 μA
VIN Current Limit A
COMP 100 μA
Sink current
PWRGD 10 mA
SS/TR 200 μA
Electrostatic Discharge (HBM) QSS 009-105 (JESD22-A114A) 2 kV
Electrostatic Discharge (CDM) QSS 009-147 (JESD22-C101B.01) 500 V
Operating junction temperature –40 150 °C
Storage temperature –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
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