Datasheet

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TPS54010
SLVS509B – MAY 2004 – REVISED JUNE 2005
ELECTRICAL CHARACTERISTICS (continued)
T
J
= -40°C to 125°C, VIN = 3 V to 4 V, PVIN = 2.2 V to 4 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ERROR AMPLIFIER
Error amplifier open-loop voltage gain 1 k Ω COMP to AGND
(4)
90 110 dB
Error amplifier unity gain bandwidth Parallel 10 k Ω , 160 pF COMP to AGND
(4)
3 5 MHz
Error amplifier common mode input voltage
Powered by internal LDO
(4)
0 VBIAS V
range
Input bias current, VSENSE VSENSE = V
ref
60 250 nA
Output voltage slew rate (symmetric), COMP 1 1.4 V/µs
PWM COMPARATOR
PWM comparator propagation delay time, PWM
comparator input to PH pin (excluding 10-mV overdrive
(4)
70 85 ns
deadtime)
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA 0.82 1.2 1.4 V
Enable hysteresis voltage, SS/ENA
(4)
0.03 V
Falling edge deglitch, SS/ENA
(4)
2.5 µs
Internal slow-start time 2.6 3.35 4.1 ms
Charge current, SS/ENA SS/ENA = 0 V 2 5 8 µA
Discharge current, SS/ENA SS/ENA = 0.2 V, VIN = 2.7 V, PVIN = 2.5 V 1.3 2.3 4 mA
POWER GOOD
Power-good threshold voltage VSENSE falling 93 %V
ref
Power-good hysteresis voltage
(4)
3 %V
ref
Power-good falling edge deglitch
(4)
35 µs
Output saturation voltage, PWRGD I
(sink)
= 2.5 mA 0.18 0.3 V
Leakage current, PWRGD VIN = 3.3 V, PVIN = 2.5 V 1 µA
CURRENT LIMIT
Current limit VIN = 3.3 V, PVIN = 2.5 V
(4)
, Output shorted 14.5 21 A
Current limit leading edge blanking time
(4)
100 ns
Current limit total response time
(4)
200 ns
THERMAL SHUTDOWN
Thermal shutdown trip point
(4)
135 165 °C
Thermal shutdown hysteresis
(4)
10 °C
OUTPUT POWER MOSFETS
VIN = 3 V, PVIN = 2.5 V 8 21
r
DS(on)
Power MOSFET switches m Ω
VIN = 3.6 V, PVIN = 2.5 V 8 18
(4) Specified by design
4