Datasheet

TPS53114PWP
(TSSOP16)
SW
DRVL
DRVH
VBST
EN
VO
VFB
GND
VREG5
TRIP
PGND
C3
C1
10uFx2
L1
R2
R1
C2
0.1uF
Q1
Q2
VO1
C5 4.7uF
C6
1uF
R3
1
16
10
13
14
15
8
11
12
4
6
7
VIN
FSEL
V5FILT
9
CER
5
3
SS
VIN
2
C4
VIN
C7
THERMAL
PAD
SGND
SGND
SGND
SGND
PGND
PGND
TPS53114PW
(TSSOP16)
SW
DRVL
DRVH
VBST
EN
VO
VFB
GND
VREG5
TRIP
PGND
C3
C1
10uFx2
L1
R2
R1
C2
0.1uF
Q1
Q2
VO1
C5 4.7uF
C6
1uF
R3
1 16
10
13
14
15
8
11
12
4
6
7
VIN
FSEL
V5FILT
9
CER
5
3
SS
VIN
2
C4
VIN
C7
SGND
SGND
SGND
SGND
PGND
PGND
TPS53114
SLVS887B –APRIL 2009–REVISED OCTOBER 2010 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
TYPICAL APPLICATION CIRCUITS
Figure 1. HTSSOP
Figure 2. TSSOP
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