Datasheet

1
2
3
4
15
14
13
12
VTTSNS
U1
TPS51916RUK
VLDOIN
VTT
VTTGND
VBST
DRVH
SW
V5IN
5 11VTTREF DRVL
10987
PGND VDDQSNS REFIN GND
6
VREF
16171819
S5 S3
TRIP
MODE
20
PGOOD
21
PwPad
C6
1 mF
UDG-10196
C7
0.1 mF
C8
10 mF
C9
10 mF
V
IN
8 V to 20 V
PGND
R6
0 W
C5
0.1 mF
R7 0 W
L1
1 mH
Q2
FDMS8670AS
C10
4 x 47 mF
VDDQ_GND
PGND
R5
49.9 kW
R4
10 kW
C3
0.1 mF
C4
10 nF
C2
0.22 mF
C1
10 mF
C12
10 mF
PGND
VTT
0.75 V/2 A
VTTREF
0.75 V
VTTGND
S5
S3
R1
100 kW
R2 1 kW
R3 36 kW
V5IN
4.5 V to 5.5
V
Q1
FDMS8680
VDDQ
1.5 V/10 A
AGND
PGND
AGND
PGND
TPS51916
SLUSAE1D –DECEMBER 2010–REVISED JUNE 2012 www.ti.com
Figure 40. DDR3, DCAP-2™ 500-kHz Application Circuit, Tracking Discharge
Table 4. DDR3, DCAP-2™ 500-kHz Application Circuit, List of Materials
REFERENCE
QTY SPECIFICATION MANUFACTURE PART NUMBER
DESIGNATOR
C8, C9 2 10 µF, 25 V Taiyo Yuden TMK325BJ106MM
C10 4 47 µF, 6.3 V TDK C2012X5R0J476M
L1 1 1 µH, 18.5 A, 2.3 mΩ NEC Tokin MPC1055L1R0C
Q1 1 30 V, 35 A, 8.5 mΩ Fairchild FDMS8680
Q2 1 30 V, 42 A, 3.5 mΩ Fairchild FDMS8670AS
24 Submit Documentation Feedback Copyright © 2010–2012, Texas Instruments Incorporated