Datasheet

1
2
3
4
15
14
13
12
VTTSNS
U1
TPS51916RUK
VLDOIN
VTT
VTTGND
VBST
DRVH
SW
V5IN
5 11VTTREF DRVL
10987
PGND VDDQSNS REFIN GND
6
VREF
16171819
S5 S3
TRIP
MODE
20
PGOOD
21
PwPad
C6
1 mF
UDG-10195
C7
0.1 mF
C8
10 mF
C9
10 mF
C10
10 mF
V
IN
8 V to 20 V
PGND
R6
0 W
C5
0.1 mF
R7 0 W
L1
0.56 mH
Q2
FDMS8670AS
Q3
FDMS8670AS
C11
330 mF
VDDQ_GND
PGND
R5
49 kW
R4
10 kW
C3
0.1 mF
C4
10 nF
C2
0.22 mF
C1
10 mF
C12
10 mF
PGND
VTT
0.75 V/2 A
VTTREF
0.75 V
VTTGND
S5
S3
R1
100 kW
R2 200 kW
R3 36 kW
V5IN
4.5 V to 5.5
V
Q1
FDMS8680
VDDQ
1.5 V/20 A
AGND
PGND
AGND
PGND
´
£
p´ ´ ´
C C SW
X OUT
R C f
2 G L C 3
TPS51916
www.ti.com SLUSAE1D –DECEMBER 2010–REVISED JUNE 2012
where
• R
C
×C
C
time constant is 23 µs for 500 kHz operation (or 14.6 µs for 670 kHz operation)
• G = 0.25 (13)
TPS51916 Application Circuits
Figure 39. DDR3, D-CAP™ 400-kHz Application Circuit, Tracking Discharge
Table 3. DDR3, D-CAP™ 400-kHz Application Circuit, List of Materials
REFERENCE
QTY SPECIFICATION MANUFACTURE PART NUMBER
DESIGNATOR
C8, C9, C10 3 10 µF, 25 V Taiyo Yuden TMK325BJ106MM
C11 1 330 µF, 2V, 6 mΩ Panasonic EEFSX0D331XE
L1 1 0.56 µH, 21 A, 1.56 mΩ Panasonic ETQP4LR56WFC
Q1 1 30 V, 35 A, 8.5 mΩ Fairchild FDMS8680
Q2, Q3 2 30 V, 42 A, 3.5 mΩ Fairchild FDMS8670AS
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