Datasheet

TPS51604
SLUSBA6A –DECEMBER 2012–REVISED AUGUST 2013 www.ti.com
ELECTRICAL CHARACTERISTICS
These specifications apply for T
J
= –40°C to 105°C and VDD = 5.0V unless otherwise specified.
PARAMETER CONDITIONS MIN TYP MAX UNITS
VDD INPUT SUPPLY
V
SKIP
= V
VDD
or V
SKIP
= 0 V, PWM = High 160 600
V
SKIP
= V
VDD
or V
SKIP
= 0 V, PWM = Low 250
I
CC
Supply current (operating) µA
V
SKIP
= V
VDD
or V
SKIP
= 0 V, PWM = Float 130
V
SKIP
= Float 8
VDD UNDERVOLTAGE LOCKOUT (UVLO)
Rising threshold 4.15
V
UVLO
UVLO threshold V
Falling threshold 3.7
V
UVHYS
UVLO hysteresis 0.2 V
PWM AND SKIP I/O SPECIFICATIONS
Pull up to VDD 1.7 MΩ
R
I
Input impedance
Pull down (to GND) 800 kΩ
V
IL
Low-level input voltage 0.6
V
IH
High-level input voltage 2.65
V
V
IHH
Hysteresis 0.2
V
TS
Tri-state voltage 1.3 2.0
Tri-state activation time (falling)
t
THOLD(off1)
60
PWM
ns
Tri-state activation time (rising)
t
THOLD(off2)
60
PWM
Tri-state activation time (falling)
t
TSKF
1
SKIP
µs
Tri-state activation time (rising)
t
TSKR
1
SKIP
t
3RD(PWM)
Tri-state exit time PWM 100 ns
t
3RD(SKIP)
Tri-state exit time SKIP 50 µs
HIGH-SIDE GATE DRIVER (DRVH)
t
R(DRVH)
Rise time DRVH rising, C
DRVH
= 3.3 nF; 20% to 80% 30 ns
t
RPD(DRVH)
Rise time propogation delay C
DRVH
= 3.3 nF 40 ns
Source resistance, (V
BST
– V
SW
) = 5 V, high state,
R
SRC
Source resistance 4 8 Ω
(V
BST
–V
DRVH
) = 0.1 V
t
F(DRVH)
Fall time DRVH falling, C
DRVH
= 3.3 nF 8 ns
t
FPD(DRVH)
Fall-time propagation delay C
DRVH
= 3.3 nF 25 ns
Sink resistance, (V
BST
–V
SW
) forced to 5 V, low state
R
SNK
Sink resistance 0.5 1.6 Ω
(V
DRVH
–V
SW
) = 0.1 V
R
DRVH
DRVH to SW resistance
(1)
100 kΩ
LOW-SIDE GATE DRIVER (DRVL)
t
R(DRVL)
Rise time DRVL rising, C
DRVL
= 3.3 nF; 20% to 80% 15 ns
t
RPD(DRVL)
Rise time propogation delay C
DRVL
= 3.3 nF 35 ns
Source resistance, (V
VDD
–GND) = 5 V, high state,
R
SRC
Source resistance 1.5 3 Ω
(V
VDD
–V
DRVL
) = 0.1 V
t
F(DRVL)
Fall time DRVL falling, C
DRVL
= 3.3 nF 10 ns
t
FPD(DRVL)
Fall-time propagation delay C
DRVL
= 3.3 nF 15 ns
Sink resistance, (V
VDD
– GND) = 5 V, low state,
R
SNK
Sink resistance 0.4 1.6 Ω
(V
DRVL
–GND) = 0.1 V
R
DRVL
DRVL to GND resistance
(1)
100 kΩ
(1) Specified by design. Not production tested.
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