Datasheet

Not Recommended for New Designs
TPS51315
www.ti.com SLUS881B –MAY 2009–REVISED AUGUST 2012
ELECTRICAL CHARACTERISTICS (continued)
over recommended free-air temperature range (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
POWERGOOD COMPARATOR
PG in from lower (PGOOD goes high),
92.5% 95% 97.5%
T
A
= 25°C
PG Low hysteresis (PGOOD goes low) –4.5% –5.5% –6.5%
V
TH(PG)
Powergood threshold
PG in from higher (PGOOD goes high),
102.5% 105% 107.5%
T
A
= 25°C
PG High hysteresis (PGOOD goes low) 4.5% 5.5% 6.5%
I
PG(max)
Powergood sink current V
PGOOD
= 0.5 V 2.5 7.5 mA
T
PGDEL
PGOOD delay Delay for PGOOD in 64 μs
UVLO / LOGIC THRESHOLD
Wake up (UVLO out) 3.4 3.7 3.9 V
V
UVLO
V5FILT UVLO threshold
Hysteresis 200 300 400 mV
SKIP mode enabled 3.3V
V
EN_PSV
EN_PSV connection
PWM-Only mode enabled FLOAT
EN_PSV low 0.7 1 1.3 V
Hysteresis 130 160 220 mV
V
EN_PSV
EN_PSV logic input voltage EN_PSV float 1.70 1.95 2.25 V
EN_PSV high 2.2 2.5 2.9 V
Hysteresis 100 170 250 mV
PROTECTION: OVERVOLTAGE (OVP) AND UNDERVOLTAGE (UVP)
OVP detect 110% 115% 120%
V
OVP
VFB OVP trip threshold
Hysteresis 5%
UVP detect 65% 70% 75%
V
UVP
VFB UVP trip threshold
Hysteresis 10%
T
UVPDEL
VFB UVP delay 32 μs
T
UVPEN
Output UVP enable delay 2 ms
THERMAL SHUTDOWN
Shutdown temperature
(3)
145 160 175 °C
T
SDN
Thermal SDN threshold
Hysteresis
(3)
10 12 14 °C
INTEGRATED MOSFET
R
DS(on)upper
Upper MOSFET R
DS(on)
See
(3)
19 mΩ
R
DS(on)lower
Lower MOSFET R
DS(on)
See
(3)
7 mΩ
(3) Ensured by design. Not production tested.
Copyright © 2009–2012, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: TPS51315