Datasheet

SLUU182 − March 2004
17
High-Performance Dual Synchronous Buck Conversion Using the TPS5124
6 Layout Guidelines
Proper design and layout is crucial to the performance of the power supply. Here are some
suggestions to the layout of TPS5124 design.
A four−layer PCB design is recommended for designs using the TPS5124. Use at least one
layer dedicated to the PWRGND plane.
All sensitive analog components such as INV, REF, CT, GND, SCP and SOFTSTART should
be reference to ANAGND.
Ideally, all of the area directly under TPS5124 chip should also be ANAGND.
ANAGND and PWRGND should be isolated as much as possible, with a single point
connection between them
6.1 Low side MOSFET(s)
The source of low-side MOSFET(s) should be referenced to PWRGND. Otherwise ANAGND
is subject to the noise of the outputs.
PWRGND should be placed close to the source of low-side MOSFET(s).
6.2 Connections
Connections from the drivers to the gate of the power MOSFETs should be as short and
wide as possible to reduce stray inductance. This becomes more critical if external gate
resistors are not used. In addition, external gate resistor for the high-side FET(s) will
considerably reduce the noise at the LL node and improve the performance of the current
limit function.
The connection from LL to the power MOSFET(s) should be as short and wide as possible.
6.3 Bypass capacitor
The bypass capacitor for VCC should be placed close to the TPS5124.
The bulk storage capacitors across VCC should be placed close to the power MOSFETs.
High-frequency bypass capacitors should be placed in parallel with the bulk capacitors and
connected close to the drain of the high-side MOSFET(s) and to the source of the low-side
MOSFET(s).
For noise reduction, a 0.1-µF capacitor C
TRIP
should be placed in parallel with the trip
resistor R
CL
.
6.4 Bootstrap capacitor
The bootstrap capacitor CBS (connected from LH to LL) should be placed close to the
TPS5124.
LH and LL should be routed close to each other to minimize noise coupling to these traces.