Datasheet

9
10
11
12
VO1
PGOOD
VO2
VREG3
TPS51125RGE
(QFN24)
13 14 15 16
VBST1
DRVL1
LL1
DRVH1
VBST2
DRVH2
LL2
DRVL2
17
EN0
8
ENTRIP2
7
6
VFB2
5
VREF
4
TONSEL
3
VFB1
2 1
ENTRIP1
18
SKIPSEL
19
20
GND
21
VIN
22
23
24
VCLK
VO1
5V/8A
L2
3.3mH
Q3
IRF7821
VO1_GND
PGND
C9
10mF
C7
0.1mF
VIN
VO2
3.3V/8A
L1
3.3mH
Q1
IRF7821
VO2_GND
C4
0.1mF
VIN
PowerPAD
C11
33mF
VREG5
C10
POSCAP
330mF
PGND
R9
5.1W
VIN
5.5~28V
R7
5.1W
C2
10mF
C1
10mF
PGND
C5
POSCAP
330mF
5V/100mA
PGND
R4
30kW
R2
20kW
R1
13kW
SGND
VREG5
VREG5
R8
100kW
PGND
R3
20kW
C6
0.22mF
PGND
SGND
R6
130kW
SGND
R5
130kW
C16
1uF
C13
100nF
C14
100nF
C15
100nF
PGND
15V/10mA
D1
D2
D3
D4
C12
100nF
C3
10mF
PGND
3.3V/100mA
C8
10mF
VREF
VO1
EN0
PGNDPGND
SGND
VREF
R10
620kW
S1
SGND
Q2
FDS6690AS
Q4
FDS6690AS
TPS51125
SLUS786G –OCTOBER 2007–REVISED JUNE 2012 www.ti.com
Application Circuit
Figure 42. 5-V/8-A, 3.3-V/8-A Application Circuit (245-kHz/305-kHz Setting)
Table 4. List of Materials for 5-V/8-A, 3.3-V/8-A Application Circuit
SYMBOL SPECIFICATION MANUFACTURER PART NUMBER
C1, C2, C8, C9 10 μ F, 25 V Taiyo Yuden TMK325BJ106MM
C3 10 μF, 6.3 V TDK C2012X5R0J106K
C11 33 μF, 6.3 V TDK C3216X5RBJ336M
C5, C10 330 μF, 6.3 V, 25 mΩ Sanyo 6TPE330ML
3.3 μH, 15.6 A, 5.92
L1, L2 TOKO FDA1055-3R3M
mΩ
Q1, Q3 30 V, 9.5 mΩ IR IRF7821
Q2, Q4
(1)
30 V, 12 mΩ Fairchild FDS6690AS
(1) Please use MOSFET with integrated Schottky barrier diode (SBD) for low side, or add SBD in parallel
with normal MOSFET.
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