Datasheet

9
10
11
12
VO1
PGOOD
VO2
VREG3
TPS51123RGE
(QFN24)
13 14 15 16
VBST1
DRVL1
LL1
DRVH1
VBST2
DRVH2
LL2
DRVL2
17
E
N
0
8
T
R
I
P
2
7
6
V
F
B
2
5
V
R
E
F
4
T
O
N
S
E
L
3
V
F
B
1
2 1
T
R
I
P
1
18
S
K
I
P
S
E
L
19
20
G
N
D
21
V
I
N
22
23
24
E
N
C
VO1
5V/8A
L2
3.3mH
Q3
IRF7821
VO1_GND
PGND
C9
10mF
C7
0.1mF
VIN
VO2
3.3V/8A
L1
3.3mH
Q1
IRF7821
VO2_GND
C4
0.1mF
VIN
PowerPAD
C11
33 mF
V
R
E
G
5
C10
POSCAP
330mF
PGND
R9
5.1W
VIN
5.5 ~ 28V
R7
5.1W
C2
10mF
C1
10mF
PGND
C5
POSCAP
330 mF
5V/100mA
PGND
R4
30kW
R2
20kW
R1
13kW
SGND
VREG5
VREG5
R8
100kW
PGND
R3
20kW
C6
0.22mF
PGND
SGND
R6
130kW
SGND
R5
130kW
ENC
C3
10mF
PGND
3.3V/100mA
C8
10mF
EN0
PGND
PGND
SGND
Q2
FDS6690AS
Q4
FDS6690AS
UDG-08165
SGND
TPS51123
SLUS890E –DECEMBER 2008–REVISED JANUARY 2013 www.ti.com
Application Circuit
Figure 39. 5-V/8-A, 3.3-V/8-A Application Circuit (245-kHz/305-kHz Setting)
Table 4. List of Materials for 5-V/8-A, 3.3-V/8-A Application Circuit
REFERENCE SPECIFICATION MANUFACTURER PART NUMBER
DESIGNATOR
C1, C2, C8, C9 10 μF/25 V Taiyo Yuden TMK325BJ106MM
C3 10 μF/6.3 V TDK C2012X5R0J106K
C11 33 μF/6.3V TDK C3216X5RBJ336M
C5, C10 330 μF/6.3 V/25 mΩ Sanyo 6TPE330ML
L1, L2 3.3 μH, 15.6 A, 5.92 mΩ TOKO FDA1055-3R3M
Q1, Q3 30 V, 9.5 mΩ IR IRF7821
Q2, Q4
(1)
30 V, 12 mΩ Fairchild FDS6690AS
(1) Use a MOSFET with an integrated Schottky barrier diode (SBD) for the low-side, or add an SBD in parallel with a normal MOSFET.
28 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated
Product Folder Links: TPS51123