Datasheet

T
J
− Junction Temperature − °C
I
DISCH
− VDDQ Discharge Current − mA
30
40
50
70
80
60
20
10
−50 0 50 100 150
T
J
− Junction Temperature − °C
I
TRIP
− CS Current − µA
2
0
−50 0 50 100 150
6
8
4
10
14
16
12
PGOOD = HI
PGOOD = LO
T
J
− Junction Temperature − °C
I
DISCH
− VTT Discharge Current − mA
15
10
25
20
30
−50 0 50 100 150
T
J
− Junction Temperature − °C
V
TRIP
− OVP/UVP Trip Threshold − %
60
−50 0 50 100 150
80
120
100
140
V
UVP
V
OVP
TPS51116
SLUS609H – MAY 2004 – REVISED JULY 2009 ................................................................................................................................................................ www.ti.com
TYPICAL CHARACTERISTICS (continued)
CS CURRENT VDDQ DISCHARGE CURRENT
vs vs
JUNCTION TEMPERATURE JUNCTION TEMPERATURE
Figure 12. Figure 13.
VTT DISCHARGE CURRENT OVERVOLTAGE AND UNDERVOLTAGE THRESHOLD
vs vs
JUNCTION TEMPERATURE JUNCTION TEMPERATURE
Figure 14. Figure 15.
26 Submit Documentation Feedback Copyright © 2004 – 2009, Texas Instruments Incorporated
Product Folder Link(s): TPS51116