Datasheet
Table Of Contents
- FEATURES
- DESCRIPTION
- APPLICATIONS
- ABSOLUTE MAXIMUM RATINGS
- DISSIPATION RATINGS
- RECOMMENDED OPERATING CONDITIONS
- ELECTRICAL CHARACTERISTICS
- DEVICE INFORMATION
- DETAILED DESCRIPTION
- VDDQ SMPS, Dual PWM Operation Modes
- VDDQ SMPS, Light Load Condition
- Low-Side Driver
- High-Side Driver
- Current Sensing Scheme
- PWM Frequency and Adaptive On-Time Control
- VDDQ Output Voltage Selection
- VTT Linear Regulator and VTTREF
- Controling Outputs Using the S3 and S5 Pins
- Soft-Start and Powergood
- VDDQ and VTT Discharge Control
- Current Protection for VDDQ
- Current Protection for VTT
- Overvoltage and Undervoltage Protection for VDDQ
- V5IN (PWP), V5FILT (RGE) Undervoltage Lockout (UVLO) Protection
- V5IN (PWP), V5FILT (RGE) Input Capacitor
- Thermal Shutdown
- APPLICATION INFORMATION
- TYPICAL CHARACTERISTICS

TI Information — Selective Disclosure
TPS51116
SLUS609I –MAY 2004–REVISED JANUARY 2014
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range, V
V5IN
= 5 V, VLDOIN is connected to VDDQ output (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DUTY CONTROL
t
ON
Operating on-time V
IN
= 12 V, V
VDDQSET
= 0 V 520
t
ON0
Startup on-time V
IN
= 12 V, V
VDDQSNS
= 0 V 125
ns
t
ON(min)
Minimum on-time T
A
= 25°C
(3)
100
t
OFF(min)
Minimum off-time T
A
= 25°C
(3)
350
ZERO CURRENT COMPARATOR
Zero current comparator
V
ZC
-6 0 6 mV
offset
OUTPUT DRIVERS
Source, I
DRVH
= –100 mA 3 6
R
DRVH
DRVH resistance
Sink, I
DRVH
= 100 mA 0.9 3
Ω
Source, I
DRVL
= –100 mA 3 6
R
DRVL
DRVL resistance
Sink, I
DRVL
= 100 mA 0.9 3
LL-low to DRVL-on
(3)
10
t
D
Dead time ns
DRVL-off to DRVH-on
(3)
20
INTERNAL BST DIODE
V
FBST
Forward voltage V
V5IN-VBST
, I
F
= 10 mA, T
A
= 25°C 0.7 0.8 0.9 V
V
VBST
= 34 V, V
LL
= 28 V, V
VDDQ
= 2.6 V,
I
VBSTLK
VBST leakage current 0.1 1.0 μA
T
A
= 25°C
PROTECTIONS
V
PGND-CS
, PGOOD = HI, V
CS
< 0.5 V 50 60 70
V
OCL
Current limit threshold mV
V
PGND-CS
, PGOOD = LO, V
CS
< 0.5 V 20 30 40
T
A
= 25°C, V
CS
> 4.5 V, PGOOD = HI 9 10 11
I
TRIP
Current sense sink current μA
T
A
= 25°C, V
CS
> 4.5 V, PGOOD = LO 4 5 6
TRIP current temperature R
DS(on)
sense scheme, On the basis
TC
ITRIP
4500 ppm/°C
coefficient of T
A
= 25°C
(3)
Overcurrent protection (V
V5IN-CS
- V
PGND-LL
), V
V5IN-CS
= 60 mV,
V
OCL(off)
-5 0 5
COMP offset V
CS
> 4.5 V
(3)
mV
Current limit threshold setting
V
R(trip)
V
V5IN-CS
(3) (4)
30 150
range
POWERGOOD COMPARATOR
PG in from lower 92.5% 95.0% 97.5%
V
TVDDQPG
VDDQ powergood threshold PG in from higher 102.5% 105.0% 107.5%
PG hysteresis 5%
I
PG(max)
PGOOD sink current V
VTT
= 0 V, V
PGOOD
= 0.5 V 2.5 7.5 mA
t
PG(del)
PGOOD delay time Delay for PG in 80 130 200 μs
(3) Specified by design. Not production tested.
(4) V5IN references to PWP packaged devices should be interpreted as V5FILT references to RGE packaged devices.
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