Datasheet

7 Bill of Materials
Bill of Materials www.ti.com
Figure 19. TPS51103EVM Bottom Copper (X-Ray View from Top)
Table 8. TPS51103EVM Bill of Materials
REFDES VALUE DESCRIPTION SIZE PART NUMBER MFR
R1, R2 10 k Ω Resistor, Chip, 1/16w, 1% 603 std std
3138-2-00-15-00-
3138-2 Pin, Wiring Terminal 0.09(D) X 0.31 inch Mill Max
00-080
C1, C2, C4 0.22 µ F Capacitor, Ceramic, 50 V, X7R, ± 10% 0603 std std
C3, C5, C9,
1 µ F Capacitor, Ceramic, 25 V, X5R, ± 10% 0603 std std
C13
C6, C8 0.1 µ F Capacitor, Ceramic, 50 V, X7R, ± 10% 0603 std std
C7, C10, C11,
10 µ F Capacitor, Ceramic, 10 V, X5R, ± 20% 0805 std std
C12
D1 BAV199DW Diode, Quad Low Leakage, 160-mA, 85-V SOT363 BAV199DW Diodes
JP1, JP2 Header, 3-pin, 100-mil spacing, (36-pin strip) 0.100 x 3 inch PTC36SAAN Sullins
MOSFET, P-channel, -60 V, -0.33 A, 2 Ω SOT23 BSS83P Infineon
Q1, Q2
MOSFET, P-channel, -12 V, -0.75 A, 0.18 Ω SOT23 BSH205 NXP
S1, S2 G12AP Switch, ON-ON Mini Toggle 0.28 x 0.18 inch G12AP NKK
U1 IC, Integrated Power LDO DGS10 TPS51103DRC TI
2-382811-1 Jumper, 0.1-in, 2 contacts 2-382811-1 Tyco/AMP
14 Using the TPS51103EVM Integrated 3.3-V/5-V Power LDO with Clock Output SLUU303A – JUNE 2008 – Revised SEPTEMBER 2008
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