Datasheet
TPS43060/61
ISNS-
ISNS+
VIN
EN
PGOOD
FB
AGND
VCC
BOOT
COMP
RT/CLK
SS
V
IN
V
OUT
R
SENSE
L
Q
H
Q
L
C
I
C
O
D
BOOT
(Note1)
C
BOOT
C
VCC
C
SS
C
C
R
C
R
T
R
SH
R
SL
Note 1: D
BOOT
is required for TPS43060, but optional for TPS43061.
LDRV
PGND
SW
HDRV
TPS43060
TPS43061
www.ti.com
SLVSBP4C –DECEMBER 2012–REVISED SEPTEMBER 2013
Low Quiescent Current Synchronous Boost DC-DC Controller with Wide V
IN
Range
Check for Samples: TPS43060, TPS43061
1
FEATURES
APPLICATIONS
2
• 58 V Maximum Output Voltage
• Thunderbolt Port for PCs
• 4.5 V to 38 V (40 V Abs Max) V
IN
Range • Automotive Power Systems
• TPS43060: 7.5 V Gate Drive Optimized for • Synchronous Flyback
Standard Threshold MOSFETs
• GaN RF Power Amplifiers
• TPS43061: 5.5 V Gate Drive Optimized for Low
• Tablet Computer Accessories
Qg NexFETs™
• Battery Powered Systems
• Current-Mode Control with Internal Slope
• 5 V, 12 V, and 24 V DC Bus Power Systems
Compensation
• Adjustable Frequency from 50kHz to 1MHz
DESCRIPTION
• Synchronization Capability to External Clock
The TPS43060 and TPS43061 are low I
Q
current-
mode synchronous boost controllers with wide input
• Adjustable Soft-Start Time
voltage range from 4.5 V to 38 V (40 V abs max) and
• Inductor DCR or Resistor Current Sensing
boosted output range up to 58 V. Synchronous
• Output Voltage Power-Good Indicator
rectification enables high efficiency for high current
applications, and lossless inductor DCR sensing
• ±0.8% Feedback Reference Voltage
further improves efficiency. The resulting low power
• 5 µA Shutdown Supply Current
losses combined with a 3 mm x 3 mm WQFN-16
• 600 µA Operating Quiescent Current
package with PowerPAD™ supports high power-
density and high reliability boost converter solutions
• Integrated Bootstrap Diode (TPS43061)
over extended (-40°C to 150°C) temperature range.
• Cycle-by-Cycle Current Limit and Thermal
Shutdown
The TPS43060 includes a 7.5 V gate drive supply
which is suitable to drive a broad range of MOSFETs.
• Adjustable UVLO and Output Overvoltage
The TPS43061 has a 5.5 V gate drive supply and
Protection
driver strength optimized for low Qg NexFET™. In
• Small 16-Pin WQFN (3 mm x 3 mm) Package
addition, TPS43061 provides an integrated bootstrap
with PowerPAD™
diode for the high side gate driver to reduce external
• -40°C to 150°C Operating T
J
Range parts count.
spacer
SIMPLIFIED SCHEMATIC
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2NexFETs, PowerPAD are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2012–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.