Datasheet


SLUS489 − OCTOBER 2001
6
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electrical characteristics over recommended operating junction temperature range,
T
A
= −40_C to 85_C for the TPS43000, RT = 75 kΩ (500 kHz), VIN = VP = 3.5 V, VOUT = 3.1 V, COMP/FB
pins shorted, BUCK-configured, T
A
= T
J
(unless otherwise noted)
NDRV
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN driven rise time
C
O
= 1 nF, VP = VIN = 5 V,
25 45
ns
VIN driven fall time
C
O
= 1 nF, VP = VIN = 5 V,
VOUT = 3.1 V
20 40
ns
VIN driven pull-up resistance
VP = VIN = 5 V, VOUT = 3.1 V
6.5 10.0
Ω
VIN driven pull-down resistance
VP = VIN = 5 V, VOUT = 3.1 V
2.25 4.00
Ω
BUCK P-channel MOSFET off to N-channel
MOSFET on anti-x delay time
VP = VIN = 5 V, VOUT = 3.1 V,
PDRV and NDRV transitioning HI delta
10 35 75
ns
VOUT driven rise time
C
O
= 1 nF, VIN = 3.1 V,
25 45
ns
VOUT driven fall time
C
O
= 1 nF, VIN = 3.1 V,
VP = VOUT = 5 V, BUCK grounded
20 40
VOUT driven pull-up resistance
VP = VOUT = VIN = 5 V, LP mode activated
6.5 10.0
Ω
VOUT driven pull-down resistance
VP = VOUT = VIN = 5 V, LP mode activated
2.25 4.00
Ω
BOOST P-channel MOSFET off to N-channel MOS-
FET on anti-x delay time
VP = VOUT = 5 V, VIN = 3.1 V,
BUCK grounded
10 35 75 ns
PDRV
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VP driven rise time
VP = VIN = 5 V, VOUT = 3.1 V
15 40
ns
VP driven fall time
VP = VIN = 5 V, VOUT = 3.1 V
C
O
= 1 nF
15 40
ns
VP driven pull-up resistance
VP = VIN = 5 V, VOUT = 3.1 V
2.5 4.0
Ω
VP driven pull-down resistance
VP = VIN = 5 V, VOUT = 3.1 V
3.5 6.0
Ω
BUCK N-channel MOSFET off to P-channel MOS-
FET on anti-x delay time
VP = VIN = 5 V, VOUT = 3.1 V,
NDRV and PDRV transitioning LO delta
10 30 75
ns
BOOST N-channel MOSFET off to P-channel MOS-
FET on anti-x delay time
VP = VOUT = 5 V, VIN = 3.1 V,
BUCK grounded
10 30 75
ns