Datasheet

5
13
12
16
15
1
2
3
KFF
RT
BP5
SGND
VIN
BPN10
SW
BP10
4
SYNC
11
ILIM
TPS40060PWP
6 SS/SD
7 VFB
8 COMP
14HDRV
LDRV
10
PGND
9
+
−
+
−
PGND
R
ILIM
174 kΩ
0.1 µF
2 Ω
10
µH
Si4470
1.0 µF
Si9407
C
O
180 µF
R
T
412 kΩ
R
KFF
301 k
Ω
UDG−02161
0.1 µF
C
SS
3300 pF
C1 3900 pF
R2
10 kΩ
R1
100kΩ
R3
4.64 kΩ
C2
220 pF
C3
470 pF
R
SW
10 Ω
30BQ060
R
BIAS
26.7 kΩ
V
OUT
V
IN
TPS40060
TPS40061
SLUS543F –DECEMBER 2002–REVISED JUNE 2013 www.ti.com
Figure 14. Design Example, 48 V to 3.3 V at 5 A dc-to-dc Converter
REFERENCES
1. Balogh, Laszlo, Design and Application Guide for High Speed MOSFET Gate Drive Circuits, Texas
Instruments/Unitrode Corporation, Power Supply Design Seminar, SEM-1400 Topic 2.
2. PowerPAD Thermally Enhanced Package Texas Instruments, Semiconductor Group, Technical Brief: TI
Literature No. SLMA002
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