Datasheet

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SLVS367A − MARCH 2001 − REVISED JUNE 2001
8
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electrical characteristics over recommended operating virtual junction temperature range,
V
CC
= 12 V, ENABLE = High, C
L
= 3.3 nF (unless otherwise noted) (continued)
low-side driver
PARAMETER
TEST CONDITIONS MIN TYP MAX UNIT
V
(VDRV)
= 4 V,
V
(LOWDR)
= 0.5 V (src) 1 1.6
V
(VDRV)
= 4 V,
T
J
= 25°C, See Note 2
V
(LOWDR)
= 4 V (sink) 2 2.4
Peak output current
V
(VDRV)
= 8 V,
V
(HIGHDR)
= 0.5 V (src) 2 2.4
A
Peak output current
V
(VDRV)
= 8 V,
T
J
= 25°C, See Note 2
V
(HIGHDR)
= 8 V (sink) 2 3.3
A
V
(VDRV)
= 14 V (src),
V
(HIGHDR)
= 0.5 V (src) 2 3.9
V
(VDRV)
= 14 V (src),
T
J
= 25°C, See Note 2
V
(HIGHDR)
= 14 V (sink) 2 4.4
V
(VDRV)
= 4.5 V,
V
(LOWDR)
= 4 V (src) 30
V
(VDRV)
= 4.5 V,
T
J
= 25°C
V
(LOWDR)
= 0.5 V (sink) 8
r
o
Output resistance
V
(VDRV)
= 7.5 V,
V
(LOWDR)
= 7 V (src) 25
Ω
r
o
Output resistance
V
(VDRV)
= 7.5 V,
T
J
= 25°C
V
(LOWDR)
= 0.5 V (sink) 7
Ω
V
(VDRV)
= 11.5 V,
V
(LOWDR)
= 11 V (src) 22
V
(VDRV)
= 11.5 V,
T
J
= 25°C
V
(LOWDR)
= 0.5 V (sink) 6
LOWDR-to-PGND resistor 250 kΩ
C
L
= 3.3 nF, T
J
= 125°C,
V
(VDRV)
= 4 V 60
C
L
= 3.3 nF, T
J
= 125°C,
See Note 2
V
(VDRV)
= 8 V 50
t
r
/t
f
Rise and fall time
See Note 2
V
(VDRV)
= 14 V 40
ns
t
r
/t
f
Rise and fall time
C
L
= 10 nF, T
J
= 125°C,
V
(VDRV)
= 4 V 110
ns
C
L
= 10 nF, T
J
= 125°C,
See Note 2
V
(VDRV)
= 8 V 100
See Note 2
V
(VDRV)
= 14 V 80
Propagation delay time, LOWDR
T
J
= 125°C,
V
(VDRV)
= 4 V 110 ns
t
PLH
Propagation delay time, LOWDR
going high (excluding deadtime)
T
J
= 125°C,
See Notes 2 and 3
V
(VDRV)
= 8 V 90 ns
t
PLH
going high (excluding deadtime)
See Notes 2 and 3
V
(VDRV)
= 14 V 80 ns
NOTES: 2: Ensured by design, not production tested.
3: The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors. The output resistance is the r
DS(on)
of the MOSFET transistor when
the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
V
CC
undervoltage lockout
PARAMETER
TEST CONDITIONS MIN TYP MAX UNIT
Start threshold voltage 10.3 V
Stop threshold voltage 7.5 V
V
hys
Hysteresis voltage 1 1.5 V
t
pd
Propagation delay time 50-mV overdrive, See Note 2 300 1000 ns
t
d
Falling-edge delay time See Note 2 2 5 us
NOTE 2: Ensured by design, not production tested.