Datasheet

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SLVS223B − NOVEMBER 1999 − REVISED AUGUST 2002
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics over recommended operating virtual junction temperature range,
V
CC
= 6.5 V, ENABLE = High, C
L
= 3.3 nF (unless otherwise noted) (continued)
output drivers
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Duty cycle < 2%,
V
(BOOT)
– V
(BOOTLO)
= 4.5 V,
V
(HIGHDR)
= 4 V
0.7 1.1
High-side sink (see Note 3)
Duty cycle < 2%,
t
pw
< 100 µs
(see Note 2)
V
(BOOT)
– V
(BOOTLO)
= 6.5 V,
V
(HIGHDR)
= 5 V
1.1 1.5
A
(see Note 2)
V
(BOOT)
– V
(BOOTLO)
= 12 V,
V
(HIGHDR)
= 10.5 V
2 2.4
Duty cycle < 2%,
V
(BOOT)
– V
(BOOTLO)
= 4.5 V,
V
(HIGHDR)
= 0.5V
1.2 1.4
Peak output
current
High-side source
(see Note 3)
Duty cycle < 2%,
t
pw
< 100 µs
(see Note 2)
V
(BOOT)
– V
(BOOTLO)
= 6.5 V,
V
(HIGHDR)
= 1.5 V
1.3 1.6
A
current
(see Note 3)
(see Note 2)
V
(BOOT)
– V
(BOOTLO)
= 12 V,
V
(HIGHDR)
= 1.5 V
2.3 2.7
Duty cycle < 2%,
V
CC
= 4.5 V, V
(LOWDR)
= 4 V 1.3 1.8
Low-side sink (see Note 3)
Duty cycle < 2%,
t
pw
< 100 µs
(see Note 2)
V
CC
= 6.5 V, V
(LOWDR)
= 5 V 2 2.5
A
Low-side sink (see Note 3)
t
pw
< 100 µs
(see Note 2)
V
CC
= 12 V, V
(LOWDR)
= 10.5 V 3 3.5
A
Low-side source
Duty cycle < 2%,
V
CC
= 4.5 V, V
LOWDR))
= 0.5V 1.4 1.7
Low-side source
(see Note 3)
Duty cycle < 2%,
t
pw
< 100 µs
(see Note 2)
V
CC
= 6.5 V, V
(LOWDR))
= 1.5 V 2 2.4
A
(see Note 3)
t
pw
< 100 µs
(see Note 2)
V
CC
= 12 V, V
(LOWDR0)
= 1.5 V 2.5 3
A
V
(BOOT)
– V
(BOOTLO)
= 4.5 V,
V
(HIGHDR)
= 0.5 V
5
High-side sink (see Note 3)
V
(BOOT)
– V
(BOOTLO)
= 6.5 V,
V
(HIGHDR)
= 0.5 V
5
Ω
V
(BOOT)
– V
(BOOTLO)
= 12 V,
V
(HIGHDR)
= 0.5 V
5
V
(BOOT)
– V
(BOOTLO)
= 4.5 V,
V
(HIGHDR)
= 4 V
75
Output
resistance
High-side source (see Note 3)
V
(BOOT)
– V
(BOOTLO)
= 6.5 V,
V
(HIGHDR)
= 6 V
75
Ω
resistance
V
(BOOT)
– V
(BOOTLO)
= 12 V,
V
(HIGHDR)
=11.5 V
75
V
(DRV)
= 4.5 V, V
(LOWDR)
= 0.5 V 9
Low-side sink (see Note 3)
V
(DRV)
= 6.5 V, V
(LOWDR)
= 0.5 V 7.5
Ω
Low-side sink (see Note 3)
V
(DRV)
= 12 V, V
(LOWDR)
= 0.5 V 6
Ω
V
(DRV)
= 4.5 V, V
(LOWDR)
= 4 V 75
Low-side source (see Note 3)
V
(DRV)
= 6.5 V, V
(LOWDR
)= 6 V 75
Ω
Low-side source (see Note 3)
V
(DRV)
= 12 V, V
(LOWDR)
= 11.5 V 75
NOTES: 2: Ensured by design, not production tested.
3. The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors. The output resistance is the r
DS(on)
of the MOSFET transistor when
the voltage on the driver output is less than the saturation voltage of the bipolar transistor.