Datasheet

 
   
  
SLVS195C − FEBRUARY 1999 − REVISED JANUARY 2001
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
detailed description
low-side driver
The low-side driver is designed to drive low Rds(on) N-channel MOSFETs. The current rating of the driver is
2 A, source and sink.
high-side driver
The high-side driver is designed to drive low Rds(on) N-channel MOSFETs. The current rating of the driver is
2 A, source and sink. The high-side driver can be configured as a ground-reference driver or a floating bootstrap
driver. The internal bootstrap diode, is a Schottky for improved drive efficiency. The maximum voltage that can
be applied between the BOOT terminal and ground is 30 V.
dead-time (DT) control
†
Dead-time control prevents shoot through current from flowing through the main power FETs during switching
transitions by controlling the turn-on times of the MOSFET drivers. The high-side driver is not allowed to turn
on until the gate drive voltage to the low-side FET is low, and the low-side driver is not allowed to turn on until
the voltage at the junction of the power FETs (Vdrain) is low; the DT terminal connects to the junction of the power
FETs.
IN
†
The IN terminal is a digital terminal that is the input control signal for the drivers. The TPS2832 has a noninverting
input; the TPS2833 has an inverting input.
†
High-level input voltages on IN and DT must be greater than or equal to 0.7V
CC
.