Datasheet

TPS28225
TPS28226
SLUS710C –MAY 2006–REVISED APRIL 2010 www.ti.com
ELECTRICAL CHARACTERISTICS
(1)
V
DD
= 7.2 V, EN/PG pulled up to V
DD
by 100-kΩ resistor, T
A
= T
J
= –40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
UNDER VOLTAGE LOCKOUT
Rising threshold (TPS28225) 3.2 3.5 3.8
Rising threshold (TPS28226) 6.35 6.70
V
PWM
= 0 V
Falling threshold (TPS28225) 2.7 3.0 V
Falling threshold (TPS28226) 4.7 5.0
Hysteresis (TPS28225) 0.5
Hysteresis (TPS28226) 1.00 1.35
BIAS CURRENTS
I
DD(off)
Bias supply current V
EN/PG
= low, PWM pin floating 350
mA
I
DD
Bias supply current V
EN/PG
= high, PWM pin floating 500
INPUT (PWM)
V
PWM
= 5 V 185
I
PWM
Input current mA
V
PWM
= 0 V –200
PWM 3-state rising threshold
(2)
1.0
V
PWM 3-state falling threshold V
PWM
PEAK = 5 V 3.4 3.8 4.0
t
HLD_R
3-state shutdown Hold-off time 250
ns
T
MIN
PWM minimum pulse to force U
GATE
pulse C
L
= 3 nF at U
GATE
, V
PWM
= 5 V 30
ENABLE/POWER GOOD (EN/PG)
Enable high rising threshold PG FET OFF 1.7 2.1
Enable low falling threshold PG FET OFF 0.8 1.0
V
Hysteresis 0.35 0.70
Power good output V
DD
= 2.5 V 0.2
UPPER GATE DRIVER OUTPUT (UGATE)
Source resistance 500 mA source current 1.0 2.0 Ω
Source current
(2)
V
UGATE-PHASE
= 2.5 V 2.0 A
t
RU
Rise time C
L
= 3 nF 10 ns
Sink resistance 500 mA sink current 1.0 2.0 Ω
Sink current
(2)
V
UGATE-PHASE
= 2.5 V 2.0 A
t
FU
Fall time C
L
= 3 nF 10 ns
(1) Typical values for T
A
= 25°C
(2) Not tested in production
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