Datasheet

TPS28225
TPS28226
www.ti.com SLUS710C –MAY 2006–REVISED APRIL 2010
Figure 30. Phase Falling Edge Switching Waveforms (10ns/div) of the Power State in Figure 27
List of Materials
The list of materials for this specific example is provided in the table. The component vendors are not limited to
those shown in the table below. It should be notd that, in this example, the power MOSFET packages were
chosen with drains on top. The decoupling capacitors C47, C48, C65, and C66 were chosen to have low profiles.
This allows the designer to meet good layout rules and place a heatsink on top of the FETs using an electrically
isolated and thermally conductive pad.
Table 1. List of Materials
REF DES COUNT DESCRIPTION MANUFACTURE PART NUMBER
C47, C48, 4 Capacitor, ceramic, 4.7 mF, 16 V, X5R 10%, low profile 0.95 mm, 1206 TDK C3216X5R1C475K
C65, C66
C41, C42 2 Capacitor, ceramic, 10 mF, 16 V, X7R 10%, 1206 TDK C3216X7R1C106K
C50, C51 2 Capacitor, ceramic, 1000 pF, 50 V, X7R, 10%, 0603 Std Std
C23 1 Capacitor, ceramic, 0.22 mF, 16 V, X7R, 10%, 0603 Std Std
C25, C49, 3 Capacitor, ceramic, 1 mF, 16 V, X7R, 10%, '0603 Std Std
C71
L3 1 Inductor, SMT, 0.12 mH, 31 A, 0.36 mΩ, 0.400 x 0.276 Pulse PA0511-101
Q8, Q9 2 Mosfet, N-channel, V
DS
30 V, R
DS
2.4 mΩ, I
D
45 A, LFPAK-i Renesas RJK0301DPB-I
Q10 1 Mosfet, N-channel, V
DS
30 V, R
DS
6.2 mΩ, I
D
30 A, LFPAK-i Renesas RJK0305DPB-I
R32 1 Resistor, chip, 0 Ω, 1/10 W, 1%, '0805 Std Std
R51, R52 2 Resistor, chip, 2.2 Ω, 1/10 W, 1%, '0805 Std Std
U7 1 Device, High Frequency 4-A Sink Synchronous Buck MOSFET Driver, Texas Instruments TPS28225DRB
DFN-8
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