Datasheet

TPS2552, TPS2553
TPS2552-1, TPS2553-1
www.ti.com SLVS841E –NOVEMBER 2008– REVISED FEBRUARY 2012
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
DEVICE INFORMATION
(1)
SON (DRV) SOT23 (DBV) RECOMMENDED
AMBIENT MAXIMUM CURRENT-LIMIT
DEVICE ENABLE
TEMPERATURE
(2)
CONTINUOUS LOAD PROTECTION
DEVICE MARKING DEVICE MARKING
CURRENT
(2)
TPS2552 Active low TPS2552DRV CHR TPS2552DBV 2552
Constant-Current
TPS2553 Active high TPS2553DRV CHT TPS2553DBV 2553
–40°C to 85°C 1.5 A
TPS2552-1 Active low TPS2552DRV-1 CHY TPS2552DBV-1 CHX
Latch-Off
TPS2553-1 Active high TPS2553DRV-1 CJZ TPS2553DBV-1 CHZ
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(2) Maximum ambient temperature is a function of device junction temperature and system level considerations, such as load current,
power dissipation and board layout. See dissipation rating table and recommended operating conditions for specific information related
to these devices.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
(1) (2)
VALUE UNIT
Voltage range on IN, OUT, EN or EN, ILIM, FAULT –0.3 to 7 V
Voltage range from IN to OUT –7 to 7 V
I
O
Continuous output current Internally Limited
See the Dissipation Rating
Continuous total power dissipation
Table
Continuous FAULT sink current 25 mA
ILIM source current 1 mA
Human Body Model 2 kV
ESD Charged Device Model 500 V
IEC system level (contact/air)
(3)
8 / 15 kV
T
J
Maximum junction temperature –40 to 150 °C
T
stg
Storage temperature –65 to 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltages are referenced to GND unless otherwise noted.
(3) Surges per EN61000-4-2. 1999 applied to output terminals of EVM. These are passing test levels, not failure threshold.
DISSIPATION RATING TABLE
THERMAL THERMAL T
A
≤ 25°C DERATING T
A
= 70°C T
A
= 85°C
RESISTANCE RESISTANCE
BOARD PACKAGE POWER FACTOR ABOVE POWER POWER
θ
JA
θ
JC
RATING
T
A
= 25°C RATING RATING
Low-K
(1)
DBV 350°C/W 55°C/W 285 mW 2.85 mW/°C 155 mW 114 mW
High-K
(2)
DBV 160°C/W 55°C/W 625 mW 6.25 mW/°C 340 mW 250 mW
Low-K
(1)
DRV 140°C/W 20°C/W 715 mW 7.1 mW/°C 395 mW 285 mW
High-K
(2)
DRV 75°C/W 20°C/W 1330 mW 13.3 mW/°C 730 mW 530 mW
(1) The JEDEC low-K (1s) board used to derive this data was a 3in × 3in, two-layer board with 2-ounce copper traces on top of the board.
(2) The JEDEC high-K (2s2p) board used to derive this data was a 3in × 3in, multilayer board with 1-ounce internal power and ground
planes and 2-ounce copper traces on top and bottom of the board.
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