Datasheet

ABSOLUTE MAXIMUM RATINGS
DISSIPATION RATING TABLE
TPS2550
TPS2551
SLVS736B – FEBRUARY 2008 – REVISED NOVEMBER 2008 ........................................................................................................................................ www.ti.com
This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields.
These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to
MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than
maximum-rated voltages to these high-impedance circuits. During storage or handling the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to an appropriate logic
voltage level, preferably either VCC or ground. Specific guidelines for handling devices of this type are contained in the publication
Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
AVAILABLE OPTIONS AND ORDERING INFORMATION
DEVICE AMBIENT ENABLE SON
(2)
SOT23
(2)
RECOMMENDED MAXIMUM
TEMPERATURE
(1)
(DRV) (DBV) CONTINUOUS LOAD CURRENT
TPS2550 Active low TPS2550DRV TPS2550DBV 1.1 A
– 40 ° C to 85 ° C
TPS2551 Active high TPS2551DRV TPS2551DBV 1.1 A
(1) Maximum ambient temperature is a function of device junction temperature and system level considerations, such as power dissipation
and board layout. See dissipation rating table and recommended operating conditions for specific information related to these devices.
(2) Add an R suffix to the device type for tape and reel.
over operating free-air temperature range unless otherwise noted
(1) (2)
VALUE UNIT
Voltage range on IN, OUT, EN or EN, ILIM, FAULT – 0.3 to 7 V
Voltage range from IN to OUT – 7 to 7 V
I
OUT
Continuous output current Internally limited
See " Dissipation Rating
Continuous total power dissipation
Table "
FAULT sink current 25 mA
ILIM source current 1 mA
HBM 2 kV
ESD
CDM 500 V
T
J
Maximum junction temperature – 40 to 150 ° C
T
Sgt
Storage temperature – 65 to 150 ° C
Lead temperature 1,6 mm (1/16-inch) from case for 10 seconds 300 ° C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltages are referenced to GND unless otherwise noted.
BOARD PACKAGE THERMAL THERMAL T
A
≤ 25 ° C DERATING T
A
= 70 ° C T
A
= 85 ° C T
A
= 110 ° C
RESISTANCE RESISTANCE
POWER FACTOR POWER POWER POWER
θ
JA
θ
JC
RATING ABOVE
RATING RATING RATING
T
A
= 25 ° C
Low-K
(1)
DBV 350 ° C/W 55 ° C/W 285 mW 2.85 mW/ ° C 155 mW 114 mW 42 mW
High-K
(2)
DBV 160 ° C/W 55 ° C/W 625 mW 6.25 mW/ ° C 340 mW 250 mW 93 mW
Low-K
(1)
DRV 140 ° C/W 20 ° C/W 715 mW 7.1 mW/ ° C 395 mW 285 mW 107 mW
High-K
(2)
DRV 75 ° C/W 20 ° C/W 1330 mW 13.3 mW/ ° C 730 mW 530 mW 200 mW
(1) The JEDEC low-K (1s) board used to derive this data was a 3in × 3in, two-layer board with 2-ounce copper traces on top of the board.
(2) The JEDEC high-K (2s2p) board used to derive this data was a 3in × 3in, multilayer board with 1-ounce internal power and ground
planes and 2-ounce copper traces on top and bottom of the board.
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