Datasheet
TPS2540, TPS2540A
TPS2541, TPS2541A
SLVSAG2C –OCTOBER 2010– REVISED OCTOBER 2011
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
Conditions are -40 ≤ T
J
≤ 125°C unless otherwise noted. V
EN
(if TPS2540 or TPS2540A) = V
DSC
(if TPS2541 or TPS2541A) =
V
IN
= 5 V, R
FAULT
= 10 kΩ, R
ILIM0
= 210 kΩ, R
ILIM1
= 20 kΩ, I
LIM_SEL
= 0 V, CTL1 = CTL2 = GND, CTL3 = V
IN
(TPS2540/40A) or
CTL3 = GND (TPS2541/41A), unless otherwise noted. Positive currents are into pins. Typical values are at 25°C. All voltages
are with respect to GND unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Undervoltage Lockout
Low-level input voltage,
V
UVLO
V
IN
rising 3.9 4.1 4.3 V
IN
Hysteresis, IN 100 mV
FAULT
Output low voltage,
I
FAULT
= 1 mA 100 mV
FAULT
Off-state leakage V
FAULT
= 5.5 V 1 µA
FAULT deglitch FAULT assertion or de-assertion due to over-current condition 5 8.5 12 ms
CTLx Inputs
CTLx pins turn on/off
V
CTL
0.9 1.1 1.65 V
threshold, falling
V
CTL_HYS
CTLx hysteresis 200 mV
Input current V
CTL
= 0 V or 5.5 V -0.5 0.5 µA
Thermal Shutdown
Thermal shutdown
155
threshold
Thermal shutdown °C
135
threshold in current-limit
Hysteresis 10
High-Bandwidth Analog Switch
V
DP/DM_OUT
= 0 V, I
DP/DM_IN
= + 30 mA 2 4
On resistance DP/DM
R
HS_ON
high-speed switch
V
DP/DM_OUT
= 2.4 V, I
DP/DM_IN
= - 15 mA 3 6
Ω
On resistance match V
DP/DM_OUT
= 0 V, I
DP/DM_IN
= + 30 mA 0.05 0.15
ΔR
HS_ON
between channels
V
DP/DM_OUT
= 2.4 V, I
DP/DM_IN
= - 15 mA 0.05 0.15
DP/DM switch
DP/DM off state
C
IO_OFF
f = 1 MHz, switch off 3 3.6
capacitance
(1)
pF
DP/DM on state
C
IO_ON
f = 1 MHz, switch on 5.4 6.2
capacitance
(2)
O
IRR
Off state isolation R
L
= 50 Ω, f = 250 MHz, -40 ≤ T
J
≤ 125°C 33
dB
On-state cross channel
X
TALK
R
L
= 50 Ω, f = 250 MHz, -40 ≤ T
J
≤ 125°C 52
isolation
I
OFF
Off state leakage V
DM_IN
= V
DP_IN
= 3.6 V, V
DM_OUT
= V
DP_OUT
= 0 V 0.1 1.5 µA
BW Bandwidth (-3 dB) R
L
= 50 Ω 2.6 GHz
t
pd
Propagation delay 0.25
Skew between opposite
ns
t
SK
transitions of the same 0.1 0.2
port (t
PHL
–t
PLH
)
(1) The resistance in series with this parasitic capacitance to GND is typically 250 Ω.
(2) The resistance in series with this parasitic capacitance to GND is typically 150 Ω.
6 Submit Documentation Feedback Copyright © 2010–2011, Texas Instruments Incorporated
Product Folder Link(s): TPS2540, TPS2540A TPS2541, TPS2541A