Datasheet
TPS24720
SLVSAL1C –MARCH 2011–REVISED SEPTEMBER 2013
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
–40°C ≤ T
J
≤ 125°C, V
CC
= 12 V, V
EN
= 3 V, V
ENSD
= 3 V, R
SET
= 190 Ω, R
IMON
= 5 kΩ, and R
PROG
= 50 kΩ to GND.
All voltages referenced to GND, unless otherwise noted.
PARAMETER CONDITIONS MIN NOM MAX UNIT
Output low voltage Sinking 2 mA 0.11 0.25 V
Input leakage current V
PGb
= 0 V, 30 V –1 0 1 µA
Delay (deglitch) time Rising or falling edge 2 3.4 6 ms
FFLTb
V
IMON
threshold Measured V
IMON
to GND 90 103 115 mV
Output low voltage Sinking 2 mA 0.11 0.25 V
Input leakage current FFLTb = 0 V, 30 V –1 0 1 µA
Delay FFLTb falling 60 115 140 ms
PROG
Bias voltage Sourcing 10 µA 0.65 0.678 0.7 V
Input leakage current V
PROG
= 1.5 V –0.2 0 0.2 µA
TIMER
Sourcing current V
TIMER
= 0 V 8 10 12 µA
V
TIMER
= 2 V 8 10 12 µA
Sinking current
V
EN
= 0 V, V
TIMER
= 2 V 2 4.5 7 mA
Upper threshold voltage 1.3 1.35 1.4 V
Lower threshold voltage 0.33 0.35 0.37 V
Timer activation voltage Raise GATE until I
TIMER
sinking, measure V
(GATE – VCC)
, V
VCC
= 12 V 5 5.9 7 V
Bleed-down resistance V
ENSD
= 0 V, V
TIMER
= 2 V 70 104 130 kΩ
IMON
Summing threshold Current limit in regulation 660 675 690 mV
OUT
Input bias current V
OUT
= 12 V 16 30 µA
SET
Input referred offset Measure SET to SENSE –1.5 0 1.5 mV
GATE
Output voltage V
OUT
= 12 V 23.5 25.8 28 V
Clamp voltage Inject 10 µA into GATE, measure V
(GATE – VCC)
12 13.9 15.5 V
Sourcing current V
GATE
= 12 V 20 30 40 µA
Fast turnoff, V
GATE
= 14 V 0.5 1 1.4 A
Sinking current Sustained, V
GATE
= 4 V to 23 V 6 11 20 mA
In inrush current limit, V
GATE
= 4 V to 23 V 20 30 40 µA
Pulldown resistance Thermal shutdown or V
ENSD
= 0 V 14 20 26 kΩ
Turn on delay V
VCC
rising to GATE sourcing, t
prr50-50
, See Figure 3 100 250 µs
SENSE
Input bias current V
SENSE
= 12 V, sinking current 30 40 µA
Current limit threshold V
OUT
= 12 V 22.5 25 27.5 mV
V
OUT
= 7 V, R
PROG
= 50 kΩ 10 12.5 15
Power limit threshold mV
V
OUT
= 2 V, R
PROG
= 25 kΩ 10 12.5 15
Fast-trip threshold 52 60 68 mV
Fast-turnoff duration 8 13.5 18 µs
Fast-turnoff delay
(2)
V
(VCC – SENSE)
= 80 mV, C
GATE
= 0 pF, t
prf50–50
, See Figure 4 200 ns
(2) Parameters are provided for reference only, and do not constitute part of TI’s published specifications for purposes of TI product
warranty.
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