Datasheet

R
RSET
= 49.9 kΩ
12-V P
LIM
during startup into
overload, CT = 0.1 µF
P dissipation internal FET
ILOAD
VOUT
CT
R
FLT
= 100 k
R
RSET
= 49.9 kΩ
12-V P
LIM
during startup into 60 Ω, 800
µF
P dissipation internal FET
I
LOAD
VOUT
12-V load at 3.6 A, then short applied
to output, R
RSET
= 49.9 kΩ
I
LOAD
VOUT
VCT
PG
Overload, power limit tripped,
12-V load stepped from 3 A to 5.4 A,
C
LOAD
= 700 µF, R
RSET
= 49.9 kΩ
I
LOAD
VOUT
VCT
PG
TPS2421-1
TPS2421-2
SLUS907H –JANUARY 2009–REVISED JANUARY 2014 www.ti.com
TYPICAL CHARACTERISTICS (continued)
Figure 9. 12-V Firm Overload, 3 A to 5.4 A, Power Limit Figure 10. 12-V Hard Overload, 3.6-A Load Then Short
Tripped
Figure 11. Power Dissipation During 12-V Startup into 60 Ω, Figure 12. Power Dissipation During 12-V Startup into 15 Ω,
800 μF 140 μF
10 Submit Documentation Feedback Copyright © 2009–2014, Texas Instruments Incorporated
Product Folder Links: TPS2421-1 TPS2421-2