Datasheet
0.5
1.5
2.0
2.5
3.0
0 2 4 6 8 10
I
(GATE)
− A
V − V
(GATE - GND)
1.0
0.0
T =125 C
J
o
T =85 C
J
o
T =25 C
J
o
T =-40 C
J
o
R =Open
(RSET)
1.5
2.5
3.5
4.5
5.0
−40 −20 0 20 40 60 80 100 120
V
(AC)
− mV
T − JunctionT
J
emperature − C
o
4.0
3.0
2.0
1.0
T =125 C
J
o
T =25 C
J
o
T =-40 C
J
o
10
20
40
50
60
2 4 6 8 10 12 14 16 18
Delay − sm
V − V
DD
30
0
T =-40 C
J
o
T =125 C
J
o
T =25 C
J
o
0.5
1.0
2.0
2.5
3.0
2 4 6 8 10 12 14 16 18
I
(VDD)
− mA
V − V
C
1.5
0.0
TPS2419
www.ti.com
SLVS998B –FEBRUARY 2010–REVISED SEPTEMBER 2011
TYPICAL CHARACTERISTICS
TURNOFF THRESHOLD PULSED GATE SINKING CURRENT
vs vs
TEMPERATURE GATE VOLTAGE
Figure 2. Figure 3.
TURNON DELAY I
(C)
vs vs
V
(C)
V
(C)
(POWER APPLIED UNTIL GATE IS ACTIVE) (GATE SATURATED HIGH)
Figure 4. Figure 5.
Copyright © 2010–2011, Texas Instruments Incorporated 7
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