Datasheet

+
-
+
-
A
GATE
Charge Pump
and Bias Supply
V
DD
Bias and
Control
V
DD
HVUV
en
HVUV
Thermal Shutdown
(135ºC)
V
BIAS
0.5V
RSET
10V
A
BYP
C
GND
3mV
en
RSVD
en
TURNOFF
COMP.
TURNON
COMP.
V
DD
1.3V
EN
S
R
Q
Q
en
MULTISTAGE
PULLDOWN
C
+
-
+
-
+
-
V
ON
TPS2419
SLVS998B –FEBRUARY 2010–REVISED SEPTEMBER 2011 www.ti.com
ELECTRICAL CHARACTERISTICS
(1)
(continued)
Common conditions (unless otherwise noted) are: [3 V ≤ ( V
(A)
, V
(C)
) ≤ 18 V ] , C
(BYP)
= 2200 pF, R
(RSET)
= open, EN = 2 V,
GATE = open, –40°C ≤ T
J
≤ 125°C, positive currents into pins, typical values are at 25°C, all voltages with respect to GND.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
GATE
V
(C)
= 3 V, V
(A-C)
= 200 mV 6 7 8
Gate positive drive voltage, V
(GATE-A)
V
5 V ≤ V
C
≤ 18 V, V
(A-C)
= 200 mV 9 10.2 11.5
Gate source current V
(A-C)
= 200 mV, V
(GATE-A)
= 4 V 250 290 350 μA
V
(A-C)
= –0.1 V
V
(GATE)
= 8 V 1.75 2.35 A
Turn-off pulsed current, I
(GATE)
V
(GATE)
= 5 V 1.25 1.75
Period 7.5 12.5 μs
V
(A-C)
= –0.1 V, 3 V ≤ V
C
≤ 18 V,
Sustain turn-off current, I
(GATE)
15 19.5 mA
2 V ≤ V
(GATE)
≤ 18 V
MISCELLANEOUS
Thermal shutdown temperature Temperature rising, T
J
135 °C
Thermal hysteresis 10 °C
FUNCTIONAL BLOCK DIAGRAM
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