Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsPMICsPMIC - power supply controllers/monitors 1 mA SOT 23 5



SLUS599A − JUNE 2004 − REVISED AUGUST 2008

  

www.ti.com

FEATURES

Up to 100-V Overvoltage Protection

D 6.9-V Overvoltage Shutdown Threshold

D 3.0-V Undervoltage Shutdown Threshold

D Overvoltage Turn-Off Time Less than 1.0 µs

D External N-Channel MOSFET Driven by

Internal Charge Pump

D 1-mA Maximum Static Supply Current

D 5-Pin SOT−23 Package

D −40_C to 85_C Ambient Temperature Range

D 2.5-kV Human-Body-Model, 500-V CDM

Electrostatic Discharge Protection

APPLICATIONS

Cellular Phones

D PDAs

D Portable PCs

D Media Players

D Digital Cameras

D GPS

FUNCTIONAL BLOCK DIAGRAM

DESCRIPTION

The TPS2400 overvoltage protection controller is

used with an external N-channel MOSFET to

isolate sensitive electronics from destructive

voltage spikes and surges. It is specifically

designed to prevent large voltage transients

associated with automotive environments (load

dump) from damaging sensitive circuitry. When

potentially damaging voltage levels are detected

by the TPS2400 the supply is disconnected from

the load before any damage can occur.

Internal circuitry includes a trimmed band-gap

reference, oscillator, zener diode, charge pump,

comparator, and control logic. The TPS2400 is

designed for use with an external N-channel

MOSFET which are readily available in a wide

variety of voltages.

1.15 V

Enable

High= Closed

Internal Rail

8 V

UVLO

OVLO

GND

VIN

GATE

Charge Pump

5 µA

18 V

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Summary of content (19 pages)

PAGE 1
SLUS599A − JUNE 2004 − REVISED AUGUST 2008 FEATURES D Up to 100-V Overvoltage Protection D 6.9-V Overvoltage Shutdown Threshold D 3.0-V Undervoltage Shutdown Threshold D Overvoltage Turn-Off Time Less than 1.0 µs D External N-Channel MOSFET Driven by D D D D DESCRIPTION Internal Charge Pump 1-mA Maximum Static Supply Current 5-Pin SOT−23 Package −40_C to 85_C Ambient Temperature Range 2.
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SLUS599A − JUNE 2004 − REVISED AUGUST 2008 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted)(1) TPS2400 Input voltage range, VIN VIN GATE (continuous) −0.3 to 110 Output voltage range, VOUT GATE (transient, < 10 µs, Duty Cycle < 0.1%) −0.
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SLUS599A − JUNE 2004 − REVISED AUGUST 2008 ELECTRICAL CHARACTERISTICS TA = −40°C to 85°C, TJ = −40°C to 125°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT II(VIN) Input supply current, VIN UVLO(upper) UVLO(hyst) Undervoltage lockout upper threshold OVP(upper) OVP(hyst) Overvoltage protection upper threshold VI(VIN) = 3.1 V VI(VIN) = 5.0 V 65 110 95 180 VI(VIN) = 6.5 V VI(VIN) = 100 V 135 220 µA A 550 1000 VI(VIN) rising 2.9 3.0 3.
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SLUS599A − JUNE 2004 − REVISED AUGUST 2008 TERMINAL FUNCTIONS Terminals Name No. I/O Description GATE 4 O Output gate drive for an external N-channel MOSFET. GND 2 − Ground NC 1 − NC 3 − VIN 5 I No internal connection Input voltage DETAILED DESCRIPTION Undervoltage and Overvoltage Comparators and Logic When the comparators detect that VCC is within the operating window, the GATE output is driven high to turn on the external N-channel MOSFET.
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SLUS599A − JUNE 2004 − REVISED AUGUST 2008 APPLICATION INFORMATION Overvoltage Protection An overvoltage condition is commonly created in these situations. D Unplugging a wall adapter from an AC outlet. Energy stored in the transformer magnetizing inductance is released and spikes the output voltage.
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SLUS599A − JUNE 2004 − REVISED AUGUST 2008 APPLICATION INFORMATION When the TPS2400 disconnects the load from the power supply, the power-supply output-voltage spikes as the stored energy in inductor LS is released. A zener diode D1 or a small ceramic capacitor can be used to keep the voltage spike at a safe level. LS RS F1 S1 F2 Q1 5 + U1 TPS2400 VS D1 (Optional) 4 LOAD D2 (Optional) 2 Power Supply Appliance UDG−04058 Figure 3.
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SLUS599A − JUNE 2004 − REVISED AUGUST 2008 APPLICATION INFORMATION The TPS2400 circuit in Figure 5 limits the inrush current without these draw backs. The TPS2400 charges the transistor Q1 gate capacitance CG with a 5-µA source when Q1 is commanded to turn on.
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SLUS599A − JUNE 2004 − REVISED AUGUST 2008 TYPICAL CHARACTERISTICS RLOAD = 50 Ω BW = 20 MHz VIN (1 V/div) VOUT (1 V/div) t − Time − 200 µs/div Figure 6. Output Turn-On Response VIN VOUT S1 Q1 FDC3616N 5 VIN + 5V VIN1 U1 TPS2400 GATE GND 2 50 Ω RLOAD 4 VGATE UDG−04062 Figure 7. Output Turn-On Response Test Circuit 8 www.ti.
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SLUS599A − JUNE 2004 − REVISED AUGUST 2008 TYPICAL CHARACTERISTICS RLOAD = 50 Ω BW = 20 MHz VIN (2 V/div) VO VOUT (2 V/div) (2 V/div) VG VGATE VIN VGATE (5 V/div) t − Time − 40 ns/div Figure 8. Output Turn-Off Response VIN VOUT D1 1N5818 Q1 FDC3616N S1 + VIN1 5V + VIN2 10 V 5 U1 TPS2400 2 50 Ω RLOAD 4 VGATE UDG−04061 Figure 9. Output Turn-Off Response Test Circuit www.ti.
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SLUS599A − JUNE 2004 − REVISED AUGUST 2008 APPLICATION INFORMATION Application Ideas VIN R1 + − Q1 Q2 Load R2 5 U1 4 TPS2400 2 Figure 10. High−Side Switch Overvoltage protector that can drive a 12−V Load R1 VIN + − Q2 R2 Load 5 U1 R3 4 TPS2400 D1 2 Q1 C1 Figure 11. Low−Side Switch Overvoltage protector that can drive a 12−V Load Refer to Texas Instrument’s Application Note, Overvoltage Protector for High−Voltage Loads (TI Literature Number SLVA163 at www.ti.
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SLUS599A − JUNE 2004 − REVISED AUGUST 2008 TYPICAL CHARACTERISTICS INPUT SUPPLY CURRENT vs JUNCTION TEMPERATURE 160 IIN(VIN) − Input Supply Current − µA 800 VIN is within the GATE Enable Range VVIN > VOVP VIN= 6.5 V IIN(VIN) − Input Supply Current − µA 180 INPUT SUPPLY CURRENT vs JUNCTION TEMPERATURE 140 120 VIN= 5.0 V 100 VIN= 3.
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SLUS599A − JUNE 2004 − REVISED AUGUST 2008 TYPICAL CHARACTERISTICS GATE OUTPUT VOLTAGE vs INPUT SUPPLY VOLTAGE GATE SINKING CURRENT vs JUNCTION TEMPERATURE 600 20 −40°C ≤ TJ ≤ 125°C 18 550 VO(GATE) − Gate Output Voltage − V IOSINKGATE) − Gate Sinking Current − mA VGATE= 15 V 500 450 400 350 16 14 12 10 8 6 4 2 300 −50 0 0 50 100 2 150 TJ − Junction Temperature − °C 4 3 TURN-OFF TIME to VGATE = 6.9 V vs JUNCTION TEMPERATURE TURN-OFF TIME to VGATE = 6.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE MATERIALS INFORMATION www.ti.com 4-May-2011 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) TPS2400DBVR SOT-23 DBV 5 3000 178.0 9.0 TPS2400DBVT SOT-23 DBV 5 250 178.0 9.0 Pack Materials-Page 1 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 3.23 3.17 1.37 4.0 8.0 Q3 3.23 3.17 1.37 4.0 8.
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PACKAGE MATERIALS INFORMATION www.ti.com 4-May-2011 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS2400DBVR SOT-23 DBV 5 3000 180.0 180.0 18.0 TPS2400DBVT SOT-23 DBV 5 250 180.0 180.0 18.
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IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.