Datasheet
Table Of Contents
0.2
0.3
0.4
0.5
0.6
0.7
−50 −25 0 25 50 75 100 125
Junction Temperature (°C)
Pass FET Resistance (Ω)
G008
8.5
8.8
9
9.2
9.5
9.8
10
−50 −25 0 25 50 75 100 125
Junction Temperature (°C)
Mark Resistance (k )Ω
G007
120
130
140
150
160
−50 −25 0 25 50 75 100 125
Junction Temperature (°C)
Current Inrush Limit (mA)
G009
85
86
87
88
89
−50 −25 0 25 50 75 100 125
Junction Temperature (°C)
Inrush Current Termination (%)
G010
0.99
1
1.01
1.02
−50 −25 0 25 50 75 100 125
Junction Temperature (°C)
Current Limit (A)
G011
38.2
38.22
38.24
38.26
38.28
38.3
−50 −25 0 25 50 75 100 125
UVLO Rising Threshold
Junction Temperature (°C)
V
(VDD−VSS)
(V)
G012
TPS2379
SLVSB98 –MARCH 2012
www.ti.com
TYPICAL CHARACTERISTICS (continued)
Figure 10. Mark Resistance vs Temperature Figure 11. Pass FET Resistance vs Temperature
Figure 12. PoE Inrush Current Limit vs Temperature Figure 13. Inrush Termination Threshold vs Temperature
Figure 14. PoE Current Limit vs Temperature Figure 15. UVLO Rising Threshold vs Temperature
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