Datasheet

TPS2379
V
DD
DE N
CLS
V
SS
1
2
3
4
GATE
T2P
CDB
RTN
8
7
6
5
PowerPAD™
12V &
10V
22V &
21.25V
38.1V &
32V
V
DD
1
0
S
R
Q
Inrush limit
threshold
Current limit
threshold
V
SS
RTN
CLS
V
SS
DEN
800ms
2.5V
REG.
Detection
Comp.
4V
Hotswap
MOSFET
Class
Comp.
Mark
Comp.
12V
UVLO
Comp.
OTSD
I
RTN
sense,1 if < 90% of inrush current limit
1 = inrush
Signals referenced to V
SS
unless otherwise noted
1
4 5
3
2
Class
Comp.
5V & 4V
0 = current limit
Inrush latch
800ms
1
0
I
RTN
sense
RTN
Type 2
State Eng.
Mark Comp Output
UVLO Comp Output
V
SS
365ms
8
GATE
6V
GATE DRIVER
S
R
Q
RTN
High if over
temperauture
6
CDB
7
T2P
RTN
TPS2379
www.ti.com SLVSB98 –MARCH 2012
PIN FUNCTIONS
NAME NO. I/O DESCRIPTION
V
DD
1 I Connect to positive PoE input power rail. Bypass with 0.1 µF to V
SS
.
DEN 2 I/O Connect 24.9 kΩ to V
DD
for detection. Pull to V
SS
disable pass MOSFET.
CLS 3 O Connect resistor from CLS to V
SS
to program classification current.
V
SS
4 Connect to negative power rail derived from PoE source.
RTN 5 O Drain of PoE pass MOSFET.
CDB 6 O Open-drain converter disable output, active low, referenced to RTN.
T2P 7 O Active low indicates type 2 PSE connected.
GATE 8 O Auxiliary gate driver output.
Pad The PowerPad™ must be connected to V
SS
. A large fill area is required to assist in heat dissipation.
Figure 3. Functional Block Diagram
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